Epistar Corporation

Yung-Hsin Yang

Hsin-Hsien Wu

Ching-Hua Chiu

Chyi-Shyuan Chern

The present disclosure involves a method of fabricating a light-emitting diode (LED) wafer. The method first determines a target surface morphology for the LED wafer. The target surface morphology yields a maximum light output for LEDs on the LED wafer. The LED wafer is etched to form a roughened wafer surface. Thereafter, using a laser scanning microscope, the method investigates an actual surface morphology of the LED wafer. Afterwards, if the actual surface morphology differs from the target surface morphology beyond an acceptable limit, the method repeats the etching step one or more times. The etching is repeated by adjusting one or more etching parameters.

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Hsinchu, Taiwan

Yung-Hsin Yang