Compal Electronics, Inc.

Asustek Computer Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Applied Research Laboratories

Industrial Technology Research Institute

Vanguard International Semiconductor Corporation

Macronix International Co., Ltd.

Tsinghua University

Academia Sinica

Ememory Technology Inc.

Providence University

Yung-Hsiang Chen

Ting-Wei Wu

Wei-Chih Hsu

Hong-Tien Wang

Chien-I Lin

Pei-Pin Huang

Tzu-Chien Lai

Yu-Lung Yeh

Wei-Chung Wang

Chi-Hung Huang

Hsin Lu

Li-Fang Chen

Shi-Kuan Chen

Chuan-Hao Wen

Wen-Yi Chiu

Yen-Hsiu Chen

Li-Wei Hung

Chien-Hui Li

Chih-Wen Chiang

Ming-Jer Kao

Kun-Yen Liu

Cheng-Jui Lin

Hsiang-Ling Liu

Chien-Hsun Wu

Li Fang Chen

Chien-Chung Hung

Hsin Yeh

Tai-Shan Liao

Wei-Liang Chen

Yi-Chen Yen

Hsiao-Ling Chan

Tai-I Yang

Tsung-Ju Chiang

Dong-Hsu Cheng

Hsin-Hui Huang

Wei-Han Hu

Ming-Ho Tsai

Huai-Te Tseng

Hui-Jou Tsai

Jyh-Chyang Tzou

Yao-Wen Chang

Yung-Yao Lee

Yang-Ann Chu

Hsing-Yi Kao

I-Chen Yang

Yung-Cheng Chen

Jyun-Hong Chen

Shih-Chin Gong

Yao-Tsung Yeh

Yuan-Jen Lee

Chia-Chi Sun

Chin-Chung Lai

Ming-Chung Peng

Tsung-Ming Pan

Chih-Chung Huang

Ching-Hung Huang

Chun-Huang Yu

I-Wen Chen

Tsai-Wen Mao

Shi Kuan Chen

Chuang Chihchous

Jack Lam

Chia-Lin Chan

Kuan-Yu Chou

Hung-San Lu

Chia-Sheng Liu

Hsin-Ming Chen

Ching-Sung Yang

Wei-Chuan Chen

Wei-Chieh Chiang

Chun-Jen Chen

Chia-Wei Hsu

Shih-Chen Wang

Wen-Hao Ching

Yueh-Hsiung Kuo

Yuan-Ping Chu

Ching-Yi Hsu

You-Chi Liu

Wei-Ming Ku

Jia-Min Shieh

Yung-Dar Chen

Hung-Chieh Wu

Chia-An Chen

Chih-Tarng Chuang

Hung-Jui Lin

Long-Cheng Chang

Ning-Sun Yang

Hui-Lian Chang

Yung-Hung Wang

Yun-Chou Wei

Chih-Chien Lin

Ming-Wang Lin

Hung-Sung Pan

Po-Chin Yu

Chung-Che Chou

Pei-Jen Lin

Chia-Hua Wu

Bo-Chang Su

Ching-Yuan Ho

Chun-Te Shen

Disclosed are a method for visual aid prompts and an electronic apparatus thereof. After a sensor adjacent to a connection interface configured on a display is driven for operation, when the sensor detects an object entering a specified range, a processor provides a driving signal to the display. The display presents at least one graphical interface on the display screen according to the driving signal, and the graphical interface includes a schematic diagram corresponding to the connection interface. The processor determines whether the connection interface is being used, and further dynamically adjusts a content presented by the graphical interface.

Method for visual aid prompts and electronic apparatus thereof

A foldable electronic device includes a first body, a second body, a first hinge module, a second hinge module, a driving sheet, and a one-way bearing. The first body has a display surface and a back surface. The first hinge module has a first shaft pivotally connected to the first body and a second shaft pivotally connected to the second body. The second shaft has a virtual axis. The second hinge module is disposed to the second body and has a rotating shaft. The rotating shaft is disposed corresponding to the virtual axis. The driving sheet is located between the first shaft and the second shaft, and is located between the first hinge module and the second hinge module. The one-way bearing is rotatably disposed around the rotating shaft. The one-way bearing has a bearing stop portion corresponding to the driving sheet.

Foldable electronic device

A structure of transferring dies includes an oxide layer supporting feature, multiple dies, a bonding feature, a supporting wafer, and a spacer. The oxide layer supporting feature includes multiple repeating units. Each repeating unit has a die setting region and a peripheral region. The die setting region of one repeating unit is separated from the peripheral region of another adjacent repeating unit. The die is disposed on the die setting region and the bonding feature is disposed on the peripheral region of the oxide layer supporting feature. The supporting wafer is disposed under the oxide layer supporting feature and separated from the die and the bonding feature by a gap. The spacer is disposed between the bonding feature and the supporting wafer, and bonded to the bonding feature.

Structure of transferring dies for use in mass transferring process

A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Method and system for forming metal-insulator-metal capacitors

A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Surface damage control in diodes

A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.

Semiconductor structure and formation thereof

A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Plating membrane

An electronic device is provided. The electronic device includes a first body with a base and a movable member, a second body, a lifting member, and a linkage mechanism. The movable member is located on an upper surface of the base and includes a first side and a second side. The first side is pivotally connected to the base. The second body is pivotally connected to the second side by using a first rotary shaft. The lifting member is pivotally connected to the movable member by using a second rotary shaft. The linkage mechanism is disposed on the movable member, is linked to the second body by using the first rotary shaft, and drives the lifting member to rotate by using the second rotary shaft. When the second body is opened upward, an air outlet on a rear side of the first body is prevented from being covered.

Electronic device

A semiconductor device is provided. The semiconductor device includes a first deep trench isolation (DTI) structure within a substrate. The first DTI structure includes a barrier structure, a dielectric structure, and a copper structure. The dielectric structure is between the barrier structure and the copper structure. The barrier structure is between the substrate and the dielectric structure.

Semiconductor device including deep trench isolation structure comprising dielectric structure and copper structure and method of making the same

A hinge structure applied to an electronic device having a first component and a second component is provided. The hinge structure includes a torque hinge and a one-way pivoting mechanism. The torque hinge includes a first base and a first rotation element. The first base connects to the first component. The first rotation element rotatably connects to the first base. The second component pivotally connects to the first rotation element through the one-way pivoting mechanism.

Hinge structure

A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Capacitive biosensor and fabricating method thereof

The disclosure provides a charging base. The charging base is applied to electrically connect to an electronic device and charge a stylus. The charging base includes: a base, a connector, a first charging end conductive structure, and a second charging end conductive structure. The base includes a through-hole. The connector is disposed on one side of the base and is used for being electrically connected to the electronic device. The first charging end conductive structure is formed on an upper surface of the base and is electrically connected to the connector. The second charging end conductive structure is formed in the through-hole and is electrically connected to the connector.

Charging base

The disclosure provides a computer device. The computer device includes a base, a host case, and a display support. The base includes an upper surface and includes a power module therein. The host case is detachably fixed to the base and electrically connected to the power module through the upper surface. One end of the display support is connected to the base, and the other end thereof includes a display connection structure.

Computer device

A hinge structure for an electronic device including a first part and a second part is provided. The hinge structure includes a first fixing base, a second fixing base, a rotating element, and a control element. The first fixing base connects to the first part. The second fixing base connects to the second part and includes a first locking structure. The rotating element includes a second locking structure. An end of the rotating element rotatably and movably connects to the first fixing base along an axial direction. The other end of the rotating element engages with the first locking structure through the second locking structure. The control element extends to the rotating element for driving the rotating element to move along the axial direction.

Growing community of inventors

Taipei, Taiwan

Yung-Hsiang Chen