Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Hog Chiu

Hun-Jan Tao

Ming-Ching Chang

Li-Te S Lin

Huan-Just Lin

Li-Shiun Chen

A method for compensating CD variations across a semiconductor process wafer surface in a plasma etching process including a semiconductor wafer having a process surface comprising patterned features; carrying out a first plasma etching process wherein the semiconductor wafer is heated to at least two selectively controllable temperature zones; determining a first dimensional variation of etched features with respect to reference dimensions over predetermined areas of the process surface including the two selectively controllable temperature zones; determining operating temperatures for the two selectively controllable temperature zones to achieve a targeted dimensional variation change in the first dimensional variation to achieve a desired second dimensional variation; plasma etching the process surface to the desired operating temperatures; and, determining an actual dimensional variation change for use in at least one subsequent plasma etching process.

Growing community of inventors

Taipei, Taiwan

Yung-Hog Chiu