Samsung Electronics Co., Ltd.

Yung Hee Lee

Sang Wook Kim

David Seo

Jin Seok Lee

Yuri Nikolaevich Tolmachev

Vasily Pashkovskiy

Seong Jun Park

Yun Kwang Jeon

Vladimir Volynets

Chang Seung Lee

Young Jun Yun

Andrey Ushakov

Won Ceak Pak

Sung Chang Park

A method of manufacturing a graphene electronic device may include forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer, growing a graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

Graphene electronic device and manufacturing method thereof

An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Apparatus and method to generate plasma

An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

Ion beam extractor

Growing community of inventors

Suwon-si, South Korea

Yung Hee Lee