Vanguard International Semiconductor Corporation

Yung-Fung Lin

Yu-Chieh Chou

Cheng-Wei Chou

Szu-Yao Chang

Cheng-Tao Chou

Hsiu-Ming Chen

A method of fabricating a semiconductor structure includes forming a GaN-based semiconductor layer on a substrate, forming a silicon-containing insulating layer on the GaN-based semiconductor layer, forming a recess in the silicon-containing insulating layer in a first etching step, wherein the first etching step is performed by using a fluorine-containing etchant and applying a first bias power, and enlarging the recess to extend into the GaN-based semiconductor layer in a second etching step, wherein the second etching step is performed by using the same fluorine-containing etchant as the first etching step and applying a second bias power that is greater than the first bias power. In addition, a method of fabricating a high electron mobility transistor is provided.

Methods of fabricating semiconductor structures with two-step etching

Methods of fabricating semiconductor structures and high electron mobility transistors

A semiconductor device includes a substrate, a flowable dielectric material and a GaN-based semiconductor layer. The substrate has a pit exposed from an upper surface of the substrate, the flowable dielectric material fully fills the pit, and the GaN-based semiconductor layer is disposed over the substrate and the flowable dielectric material.

Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure

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Taoyuan, Taiwan

Yung-Fung Lin