Industrial Technology Research Institute

Yung-Chih Liang

Chih-Ting Yeh

Shih-Hung Chen

Meng-Ting Tsai

Kun-Ju Tsai

A circuit and a method for electrostatic discharge clamping are provided. The circuit includes a detection module, a control module, and a clamping module. The detection, control, and clamping modules are coupled with a first power line of a first power source and a second power line of the first power source. Third terminals of the detection, control and clamping modules are coupled to a first power line of a second power source, a voltage division terminal of the detection module, a fourth terminal of the control module respectively. According to an electrostatic discharge event on the first power line of the first power source, the division voltage terminal of the detection module provides a voltage to the control module. Then, the control module controls the clamping module to couple the first power line of the first power source to the second power line of the first power source.

Circuit and method for electrostatic discharge clamping

One embodiment of the disclosure provides an electrostatic discharge protection circuit. The electrostatic discharge protection circuit includes a p-type field effect transistor, a capacitance device and an n-type field effect transistor. The p-type field effect transistor has a source coupled to an input/output terminal, a gate coupled to a first node and a drain coupled to a second node. The capacitance device has a first terminal coupled to a first rail and a second terminal coupled to the first node. The n-type field effect transistor has a source coupled to the first rail, a gate coupled to the second node and a drain coupled to the first node.

ESD protection circuit

One embodiment of the disclosure provides an electrostatic discharge protection circuit, including a first resistor, a p-type field effect transistor, a capacitance device and an n-type field effect transistor. The first resistor has a first terminal coupled to a first rail and a second terminal coupled to a first node. The p-type field effect transistor has a source coupled to the first rail, a gate coupled to the first node and a drain coupled to a second node. The capacitance device has a first terminal coupled to a second rail or the second node and a second terminal coupled to the first node. The n-type field effect transistor has a source coupled to the second rail, a gate coupled to the second node and a drain coupled to the first node.

A charge pump includes a first current source, a second current source, a first switch, a second switch, a third switch, a fourth switch, a reset switch, an inverse reset switch and a capacitance. The first and third switches have first terminals coupled to the first current source. The second and fourth switches have first terminals coupled to the second current source. The first, second and reset switches have second terminals coupled to a first terminal of the inverse reset switch. The reset switch has a first terminal coupled to second terminals of the third and fourth switches. The first and second switches are respectively controlled by first and second control signals, the third and fourth switches are respectively controlled by inverse signals of the first and second control signals, and the inverse reset switch is controlled by the inverse reset signal.

Charge pump and phase detection apparatus, phase-locked loop and delay-locked loop using the same

An electrostatic discharge (ESD) clamp circuit is provided. The ESD clamp circuit includes a first resistor, a second resistor, a first transistor, a second transistor, and a third transistor. A clamp device of the ESD clamp circuit is implemented by the third transistor. A parasitic capacitor of the third transistor forms a detection scheme along with the second resistor to detect the ESD. The first resistor, the second resistor, the first transistor, and the second transistor form a feedback scheme to control the third transistor for discharging the ESD current.

Electrostatic discharge clamp circuit

An ESD clamp circuit applied to a power amplifier is provided. The ESD clamp circuit includes a first line, a second line, a first circuit, a second circuit, an ESD detecting unit, a buffer unit, and an ESD clamp unit. The first line is coupled to the output terminal of the power amplifier. The first circuit is coupled to the first line. The second circuit is coupled to the first circuit. The ESD detecting unit is coupled to the first circuit and the second line. The buffer unit is coupled to the second circuit, the second line and the ESD detecting unit. The ESD clamp unit is coupled to the buffer unit, the first line and the second line. Therefore, at normal operation mode, the problem of signal loss caused by the leakage current of ESD clamp circuit can be avoided.

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Taipei, Taiwan

Yung-Chih Liang