Taiwan Semiconductor Manufacturing Comp. Ltd.

Cyntec Company

Source Photonics Inc.

Vanguard International Semiconductor Corporation

Yung-Cheng Chang

Hsun-Ying Huang

Chia-Chi Hsiao

Yi-Min Huang

Chih-Siang Chuang

Shou-Shu Lu

Chun-Mao Chiu

Shou Shu Lu

Hsin-Jung Huang

Chi-Hsun Hsieh

Wei-Chih Weng

Jia-Ren Chen

Juan-Lin Chen

Yung-Fu Yeh

I-Chang Lin

Jin-Hong Cho

Cheng-Tsung Chen

Yu-Ping Chen

Chi-Yuan Liang

Horng-Daw Shen

Ken Kuo

Emin Chou

Chien-Huei Yang

Hua-Ming Wang

Hsueh-shih Fu

Hades Lee

Syuan-Rong Huang

Chun-Fu Tung

Yi-Ping Huang

A system for determining the cause of an abnormality in a semiconductor manufacturing process includes an abnormality mode determination module, a selection module, and a root cause analysis module. The abnormality mode determination module is used to determine the similarity between wafer bin maps containing the abnormal data. When the similarity among the wafer maps is higher than a reference value, the selection module executes the steps of: determining a bad lot based on the wafer maps where the similarity is higher than the reference value; determining a time span within which the bad lot is generated; selecting other bad lots occurring in the time span and satisfying a failure model; selecting a good lot based on a fixed lot interval. The root cause analysis module is used to execute the steps of calculating the correlation among data to obtain confidence indexes.

System and method for determining cause of abnormality in semiconductor manufacturing processes

An electronic component comprising: a body; a conductive wire in the body; and a first lead comprising a first part disposed on a first surface of the body and a second part disposed on a second surface of the body, wherein the second part of the first lead comprises a first protrusion portion and a second protrusion portion spaced apart from each other, wherein a first portion of a first terminal part of the conductive wire is disposed between the first protrusion portion and the second part of the first lead disposed on the second surface of the body, and a second portion of the first terminal part of the conductive wire is disposed between the second protrusion portion and the second part of the first lead disposed on the second surface of the body.

Structure of an electronic component and an inductor

A method to from an inductive component, the method including forming a metal structure having a conductor wire and a lead frame having a first part and a second part space spaced apart from the first part and forming a magnetic body encapsulating the conductor wire, a first portion of the first part and a second portion of the second part of the lead frame adjacent to the conductor wire.

Method to form an inductive component

A WDM multiplexing/demultiplexing system includes a de-multiplexer configured to separate and guide light beams from an incident ray having a plurality of wavelengths to corresponding lenses on an optical device, a multiplexer configured to guide light beams from optical transmitters having various wavelengths through the corresponding lenses on the optical device and combine the light beams, a lens array including the corresponding lenses to receive and/or transmit the light beams from or to the de-multiplexer and multiplexer, and a light beam collimator configured to function with the multiplexer and de-multiplexer. The light beams received or transmitted by the light beam collimator and the light beams transmitted or received from or to the multiplexer and de-multiplexer are collinear. The light beam collimator and multiplexer/de-multiplexer can be easily positioned to predetermined or designed positions, thereby providing light beams output through the lenses in a plastic optical device. The WDM system advantageously reduces optical signal loss, while increasing the assembly yield.

WDM multiplexing/de-multiplexing system and the manufacturing method thereof

An inductive component is disclosed, the inductive component comprising: a metal structure, the metal structure comprising a conductor wire and a lead frame, wherein the lead frame and the conductor wire are integrally formed, wherein the lead frame comprises a first part and a second part space spaced apart from the first part, wherein a contiguous metal path is formed from the first part of the lead frame to the second part of the lead frame via the conductor wire; a magnetic body encapsulating the conductor wire, and a first portion of the first part and a second portion of the second part of the lead frame adjacent to the conductor wire.

Integrally-formed inductor

An electronic component is disclosed, wherein electronic component comprises: a body; a conductive element disposed in the body; a first lead disposed on the body, wherein a first part of the first lead is disposed on a first surface of the body, a second part of the first lead is disposed on a second surface of the body and a third part of the first lead is disposed on a third surface of the body, wherein the first surface, the second surface and the third surface of the body are not coplanar with each other, wherein the first lead is electrically connected to the conductive element.

A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.

Dark current reduction for back side illuminated image sensor

A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.

Process for enhancing image quality of backside illuminated image sensor

The present disclosure relates to a process tool system that utilizes tool sensor data and an embedded or built-in tool model to facilitate semiconductor fabrication. The process tool system includes a sensor data component, the tool model, and an execution system. The sensor data component is configured to provide the tool sensor data. The tool model is built in a process tool and is configured to generate model outputs based on model inputs. The manufacturing execution system is configured to provide tool process data, including actual metrology and previous process data, to the sensor data component. Additionally, the execution system provides the model inputs to the tool model and receives the model outputs from the tool model. The execution system provides one or more execution system outputs based on the sensor data and the model outputs. The sensor data can include measured semiconductor device characteristics.

Tool function to improve fab process in semiconductor manufacturing

Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Image sensor with improved dark current performance

A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100&#xb0; C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

Growing community of inventors

Zhubei, Taiwan

Yung-Cheng Chang