Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Che Albert Shih

Tsung-Chieh Tsai

Jhy-Kang Ting

Jyh-Kang Ting

Juing-Yi Wu

Liang-Yao Lee

A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.

Semiconductor device having a metal gate

A method of fabricating a semiconductor device includes forming a first metal gate electrode over a substrate, forming a second metal gate electrode over the substrate, removing at least a part of the first metal gate electrode to form a first opening, and filling the first opening with a non-conductive material.

Semiconductor device and fabrication method thereof

A semiconductor device includes a non-conductive gate feature over a substrate and a spacer adjoining each sidewall of the non-conductive gate feature.

Semiconductor device and fabrication method therefor

A method of fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. In at least one embodiment, a non-conductive material is used for forming the dummy gate feature to replace a sacrificial gate electrode.

Growing community of inventors

Hsinchu, Taiwan

Yung-Che Albert Shih