Taiwan Semiconductor Manufacturing Comp. Ltd.

Yung-Chang Hsu

Huan-Just Lin

Sheng-Liang Pan

Chung-Chieh Lee

Chia-Yang Hung

Guan-Xuan Chen

Po-Chuan Wang

Yungtzu Chen

Yung-Tzu Chen

Yung Tzu Chen

A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Fin field-effect transistor and method of forming the same

A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Hsinchu, Taiwan

Yung-Chang Hsu