Samsung Display Co., Ltd.

Yung Bin Chung

Eun Jeong Cho

Sangwook Lee

Joonyong Park

Bo Geon Jeon

Eun Young Lee

Joo Hee Jeon

Chaun Gi Choi

Seung Ho Jung

Yeoung Keol Woo

Hye Young Park

Woo-Jong Lee

Hyun Joo Lee

Sung-Hee Lee

Kee Hyun Nam

Jun-Sang Lyu

Kyung Hyun Ko

Sangwoo Sohn

Ji Hye Han

Eui Ri Cho

Jun Il Kwon

Heon Sik Ha

Yong Su Lee

Hyuneok Shin

Tae Wook Kang

Kwang Hyun Kim

Changhee Lee

Taewook Kang

Jae Beom Choi

Dokeun Song

Kwanghyun Kim

Chul Min Bae

Ho Jung Lee

Yeoungkeol Woo

Eun Jin Kwak

Keun Woo Kim

Juhyun Lee

Jung Yun Jo

Sung Hoon Yang

Doo Na Kim

Joon Woo Bae

Jae Hwan Chu

Do Kyeong Lee

Tae Young Ahn

Samtae Jeong

Woo Seok Jeon

Chul-Hyun Baek

Display device

A display device includes a display panel including a light emitting area and a non-light-emitting area adjacent to the light emitting area and an input sensor disposed on the display panel. The input sensor includes a first sensor conductive layer disposed on the display panel, a first sensor insulating layer disposed on the first sensor conductive layer, and a second sensor conductive layer disposed on the first sensor insulating layer. At least one of the first sensor conductive layer and the second sensor conductive layer is provided with a mesh opening defined therethrough, at least one of a side surface of the first sensor conductive layer and a side surface of the second sensor conductive layer is provided with a recessed portion defined therein, and the input sensor further includes a light absorption layer disposed in the recessed portion.

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

Display device and method of manufacturing the display device

A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

Display apparatus and method of manufacturing the same

A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 &#x212b; to about 6000 &#x212b;.

A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

Thin film transistor substrate and display panel having the same

Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

Liquid crystal display device and method of manufacturing the same

A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.

Thin film transistor array panel

Growing community of inventors

Yongin-si, South Korea

Yung Bin Chung