Schott Glass Technologies (suzhou) Co. Ltd.

Yunfei Hou

Rainer Liebald

Pengxiang Qian

Feng He

Junming Xue

Chong Wang

Hiroshi Kuroki

A method for making a bonded article, wherein a thin glass substrate is bonded on a support substrate in the absence of any interlayer by an electrostatic adhesion process with the assistance of external pressure, the pressure is applied constantly or stepwise during the adhesion process by use of a tool such as a roll or a wheel or other movable device with curved surface. The bonded article has no defects, e.g. bubbles or inclusions, in the bonded interface, which benefits transportation of the thin glass substrate and its post-processing as well. Such defect-free bonded article is also disclosed. Pressure supported electrostatic adhesion, initiated by electrostatic charges adhesion of a two members, e.g. a substrate member and a support member, is enabled to minimize, prevent and exclude defects, distortion between the adhered surfaces.

Bonded article of thin glass on support substrate, preparation method and use thereof

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO: 60-85, AlO: 1-17, BO: 8-20, NaO: 0-5, KO: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than &#x2212;0.2 and a ratio BO/AlOis equal to or larger than 0.5. The NBO is defined as NBO=2&#xd7;O/(Si+Al+B)&#x2212;4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

Low CTE boro-aluminosilicate glass for glass carrier wafers

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Wuhan, China

Yunfei Hou