Hubei University

Yunbin He

Yinmei Lu

Mingkai Li

Pan Huang

Zhouyang Luo

Daotian Shi

Gang Chang

Jian Chen

Pai Li

Qile Wang

Lufeng Chen

A method for preparing a p-type gallium oxide film is provided. An MGaN target material is subjected to ablating, sputtering or evaporation in a vacuum chamber via physical vapor deposition to obtain MGaN clusters, where M is selected from the group consisting of Al, Sc, In, Y and Lu, and 0<x<1. The MGaN clusters are oxidized by Oto obtain M-N co-doped p-type gallium oxide film on a substrate. The MGaN target material is prepared from MN powder and GaN powder through ball milling, pressing and sintering. A p-type gallium oxide film prepared by the method, and its application in the manufacturing of solar-blind ultraviolet detection devices and high-power electronic devices are also provided.

P-type gallium oxide film, and preparation method and application thereof

A (GaMe)Oternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)Oternary alloy material of the present invention is formed by solid solution of GaOand MeOin a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)Oternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of MeOis higher than that of GaO, and Gaions in GaOare partially replaced by Meions to obtain a higher band gap (GaMe)Oternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.

(GaMe)Oternary alloy material, its preparation method and application in solar-blind ultraviolet photodetector

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Hubei, China

Yunbin He