Lucent Technologies Inc.

Suzhou Shinhao Materials LLC

Shinhao Materials LLC

Enthone Incorporated

Technic, Inc.

Macdermid Enthone Gmbh

Suzhou Suzhen Bioengineering Co., Ltd

Yun Zhang

Peipei Dong

Tao Ma

Joseph Anthony Abys

Jing Wang

Zifang Zhu

Thomas B Richardson

Vincent Paneccasio, Jr

Richard W Hurtubise

Oscar Khaselev

Xuan Lin

Cai Wang

Chen Wang

Kenneth J Murski

Xingxing Zhang

Luming Chen

Chen Chen

Wei Wang

Wenbo Shao

Vincent Paneccasio

Igor S Zavarine

Robert A Schetty, Iii

Marlies Kleinfeld

Wei Ji

Christian Rietmann

Ortrud Steinius

Ji An Luo

Igor Zavarine

Juan Ding

Kilnam Hwang

Juanjuan Qian

Frank Stanley Humiec

See Hong Chiu

Bin Liu

Guozhu Shi

A metal material having thermodynamic anisotropy has an X-axis hardness of 160-180 HV, an X-axis hardness thermal expansion coefficient of 5&#xd7;10&#x2212;6-100&#xd7;10&#x2212;6 K; a Y-axis hardness of 160-180 HV, a Y-axis hardness thermal expansion coefficient of 5&#xd7;10&#x2212;6-100&#xd7;10&#x2212;6 K; and a Z-axis hardness of 180-250 HV, a Z-axis hardness thermal expansion coefficient of 50&#xd7;10&#x2212;6-1000&#xd7;10&#x2212;6 K. A method for preparing a metal material having thermodynamic anisotropy is also disclosed.

Metal material with thermodynamic anisotropy and a method of preparing the same

An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 &#x3bc;m in the long axis direction and a length of 20 nm to 2 &#x3bc;m in the short axis direction. The bamboo-like copper crystal particles have a uniform particle size, and the electroplating copper layer has a major diffraction peak at a 2&#x3b8; angle of about 44&#xb0;.

Bamboo-like copper crystal particles having a highly preferred orientation

A metal material having thermodynamic anisotropy has an X-axis hardness of 160-180 HV, an X-axis hardness thermal expansion coefficient of 5&#xd7;10-6-100&#xd7;10-6 K; a Y-axis hardness of 160-180 HV, a Y-axis hardness thermal expansion coefficient of 5&#xd7;10-6-100&#xd7;10-6 K; and a Z-axis hardness of 180-250 HV, a Z-axis hardness thermal expansion coefficient of 50&#xd7;10-6-1000&#xd7;10-6 K. A method for preparing a metal material having thermodynamic anisotropy is also disclosed.

A method for extracting polyol from a fermentation process is disclosed. The preparing method includes rectifying and purifying PDO (1,3-propanediol) from a polyol fermentation broth after concentration to form a steam condensate, wherein the concentration is a evaporative dehydration; and filtering the steam condensate through a reverse osmosis membrane to form a concentrated solution, wherein the retentate of the reverse osmosis flows back to the evaporative dehydration, and the penetrant of the reverse osmosis can be reused as a fermentation ingredient, as cleaning water or for sewage treatment; and the water content of the concentrated solution after the evaporative dehydration is 5-25 wt %; and the yield of PDO is 99.5%. The preparing method meets the requirements of water resources recycling, reduces the production loss of PDO and BDO (2,3-butanediol) during the concentration, and greatly cuts down on the amount of wastewater.

Method for extracting polyol from a fermentation process

The present application discloses a levelling compound for electrodepositing metals. The metal is of formula (II): 

Leveler, leveler composition and method for electrodeposition of metals in microelectronics

An electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation. The bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 &#x3bc;m in the long axis direction and a length of 20 nm to 2 &#x3bc;m in the short axis direction. A method of preparing the bamboo-like copper crystal particles is also disclosed.

Copper crystal particles having a highly preferred orientation and a preparation method thereof

The present disclosure relates to a leveling compound for electrodepositing metals. The compound is of formula (I) or a salt thereof: 

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature. The deposition composition comprises (a) a source of copper ions; (b) an acid selected from among an inorganic acid, organic sulfonic acid, and mixtures thereof; (c) an organic disulfide compound; (d) a compound selected from the group consisting of a reaction product of benzyl chloride and hydroxyethyl polyethyleneimine, a quaternized dipyridyl compound, and a combination thereof; and (d) chloride ions.

Copper filling of through silicon vias

The present disclosure relates to a leveling composition for electrodepositing metals. The composition comprises a compound of formula (I): 

Leveling composition and method for electrodeposition of metals in microelectronics

A process for forming a solder bump on an under bump metal structure in the manufacture of a microelectronic device comprising exposing the under bump metal structure to an electrolytic bath comprising a source of Snions, a source of Agions, a thiourea compound and/or a quaternary ammonium surfactant; and supplying an external source of electrons to the electrolytic bath to deposit a Sn&#x2014;Ag alloy onto the under bump metal structure.

Tin-silver solder bumping in electronics manufacture

A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

Copper metallization of through silicon via

Methods of providing improved metal coatings or metal deposits on a substrate, improvements in plating solutions that are used to provide such metal deposits and articles of the metal-coated substrates. The solderability of the metal coating is enhanced by incorporating trace amounts of phosphorus in the metal coating to reduce surface oxide formation during subsequent heating and thus enhance long term solderability of the metal coating. The phosphorus is advantageously provided in the metal coating by incorporating a source of phosphorus in a solution that is used to provide the metal coating on the substrate, and the metal coating is then provided on the substrate from the solution.

Reduction of surface oxidation during electroplating

In accordance with the present invention, an electroplating solution is provided for electroplating satin bright tin-copper alloy solder coatings at high speed. The preferred solution comprises sulfonic acid, tin sulfonate, copper sulfonate, non-ionic surfactant, satin brightener and an antioxidant catechol. The preferred surfactant is polyoxyethylene-block-polyoxypropylene. The preferred satin brightener is formed by the oxidation of an aqueous solution of 1-phenyl-3-parazolidinone. The preferred sulfonic acid is methanesulfonic acid.

Electroplating solution for high speed plating of tin-copper solder

In accordance with the invention, the volatility of a solder plating bath with volatile brighteners such as aldehydes has its volatility reduced by the addition of diols to the bath. The diols are advantageously 1,3 propanediol or 1,2 propanediol and are accompanied by lower molecular weight alcohols. In a preferred embodiment, a diol along with low alcohol is added to a bath comprising sulfonic acid, surfactant, grain refiner and brightening agents comprising an aromatic aldehyde and a carboxylic acid.

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Warren, NJ, United States of America

Yun Zhang