Taiwan Semiconductor Manufacturing Comp. Ltd.

Yun-Yu Hsieh

Li-Te Hsu

Cha-Hsin Chao

Yi-Wei Chiu

Ying Ting Hsia

Jeng Chang Her

Xi-Zong Chen

A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.

Contact structure for semiconductor device

A method includes forming a mask layer over a target layer. A first etching process is performed on the mask layer to form a first opening and a second opening in the mask layer. A second etching process is performed on the mask layer to reduce an end-to-end spacing between the first opening and the second opening. The first etching process and the second etching process have different anisotropy properties. A pattern of the mask layer is transferred to the target layer.

Method for forming features of semiconductor structure having reduced end-to-end spacing

A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a first conductive region within the first ILD layer, selectively removing a portion of the first conductive region to form a concave top surface of the first conductive region. The method also includes forming a second ILD layer over the first ILD layer and forming a second conductive region within the second ILD layer and on the concave top surface. The concave top surface provides a large contact area, and hence reduced contact resistance between the first and second conductive regions.

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Hsinchu, Taiwan

Yun-Yu Hsieh