Semiconductor Manufacturing International (shanghai) Corporation

Wangsu Science & Technology Co., Ltd.

Morningcore Technology Co., China

Yun Yang

Zhongshan Hong

Shaobin Li

Wei Lu

Shengfen Chiu

Zhong Shan Hong

Zuo Ya Yang

GuoBin Su

ShanZhi Chen

Shengfin Chiu

Guopeng Chen

Lujun Zou

Jiemin Zheng

Jin Da

Provided test method and apparatus of communication chip, device and medium. The test method of communication chip includes receiving end test method and transmitting end test method. The receiving end test method of the communication chip includes: an idle time slot of the receiving end of the communication chip is detected in a running process of the communication chip; a test vector is generated, and a standard result corresponding to the test vector is generated; a data frame containing the test vector is constructed, and the data frame is sent to the receiving end of the communication chip in the idle time slot to enable the receiving end of the communication chip to process the data frame; and a chip processing result uploaded by the receiving end of the communication chip is received, and the standard result is compared with the chip processing result.

Test method and apparatus of communication chip, device and medium

The present disclosure provides a node route selection method. The method includes: pre-assigning a group of acceleration nodes to an ingress node by a dispatch center; receiving a user access request in the ingress node; based on the user access request, selecting, by a service component in the ingress node, a desired acceleration node from the group of the acceleration nodes assigned to the ingress node; and accessing an origin server through the desired acceleration node corresponding to the user access request.

Node route selection method and system

A method for forming a semiconductor device includes forming a device structure having a floating gate, control gate, sidewall spacers, and source and drain regions. The device structure includes contact-hole regions and non-contact-hole regions. The method also includes forming a photo resist layer overlying the contact hole regions in the device structure and exposing the non-contact-hole regions, and forming a protective layer overlying the sacrificial layer and the exposed non-contact-hole regions. Next, an interlayer dielectric layer overlying the protective layer, and CMP (chemical mechanical polishing) is used to remove the inter-layer dielectric layer and the protective layer from above the photo resist. The photo resist layer is then removed from the contact-hole regions to expose contact holes.

Method for forming contact holes in a semiconductor device

Various embodiments provide memory devices and methods for forming the same. A substrate is provided, the substrate having one or more adjacent memory cells formed thereon. Each memory cell includes a gate structure, a control gate layer, and a first mask layer. A portion of the control gate layer is removed, to reduce a size of an exposed portion of the control gate layer in a direction parallel to a surface of the substrate. An electrical contact layer is formed on an exposed sidewall of the control gate layer and an exposed surface of the substrate. A barrier layer is formed on a sidewall of the memory cell. A conductive structure is formed on the substrate. The conductive structure has a significantly larger distance from control gate layer than from the gate structure, and the barrier layer forms an isolation layer between the conductive structure and the control gate layer.

Memory device

A mask may be used in a process for manufacturing a semiconductor device. The semiconductor device may include a source line, a first drain contact terminal, and a second drain contact terminal. The mask may include the following elements: a source-line corresponding light-transmitting portion, which corresponds to the source line; a first-drain-contact-terminal corresponding light-transmitting portion, which corresponds to the first drain contact terminal; a second-drain-contact-terminal corresponding light-transmitting portion, which corresponds to the second drain contact terminal; and a first light-blocking portion, which abuts at least one of the source-line corresponding light-transmitting portion, the first-drain-contact-terminal corresponding light-transmitting portion, and the second-drain-contact-terminal corresponding light-transmitting portion.

Mask and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device may include the following steps: preparing a stacked structure; processing the stacked structure to form a first gate structure and a preliminary structure; forming a dielectric material layer that covers at least the first gate structure; forming a dielectric layer using the dielectric material layer, such that a portion of the dielectric layer is positioned between the first gate structure and the preliminary structure; performing an annealing process on at least one of the dielectric material layer and the dielectric layer; processing the preliminary structure to form a second gate structure; and after the annealing process has been performed, forming a first metal silicide member on the second gate structure and/or forming a second metal silicide member on an active region associated with the second gate structure.

Semiconductor device, related manufacturing method, and related electronic device

Memory device and method for forming the same

A polysilicon spacer as a floating gate of a Flash memory device. An advantage of such spacer structure is to reduce a cell size, which is desirable for state-of-the-art Flash memory technology. In a preferred embodiment, the floating gate can be self-aligned to a nearby and/or within a vicinity of the select gate of the cell select transistor. In a preferred embodiment, the present invention preserves a tunnel oxide layer after the removal, using dry etching, a polysilicon spacer structure on the drain side of the select transistor gate. More preferably, the present method provides for a certain amount of tunnel oxide to remain so as to prevent the active silicon area in the drain region of the memory cell from being etched by the dry etching gas.

Growing community of inventors

Shanghai, China

Yun Yang