Samsung Electronics Co., Ltd.

Yun Suk Nam

Jin Sung Kim

Dae Won Ha

Jung Gun You

Byoung-Gi Kim

Yeong Min Jeon

Sung Chul Park

Sung Chui Park

A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.

Semiconductor device

Semiconductor device and method of fabricating the same

Methods of forming fine patterns having a width and a pitch in semiconductor devices may be used to form a semiconductor device or electronic device. The fine patterns may be formed by forming sacrificial pillars, which in certain examples may be formed from spacer patterns.

Method of forming fine patterns in a semiconductor device and method of manufacturing an electronic device

Growing community of inventors

Yongin-si, South Korea

Yun Suk Nam