Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Yun-Sheng Chen

Yu-Der Chih

Jonathan Tsung-Yung Chang

Ya-Chin King

Chrong Jung Lin

Hsin-Yuan Yu

Wen Zhang Lin

Maybe Chen

Wang-Yi Lee

Chrong-Jung Lin

Shine Chung

Sheng-Feng Weng

Chi-Shen Lee

Wen-Zhang Lin

Cheng-Jun Lin

Chun-Jung Lin

Chieh Lee

Yun-Hsin Wang

May-Be Chen

Yuan-Chia Chang

Ho-Chen Hsieh

Ping-Wen Tsai

Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Memory cell including programmable resistors with transistor components

A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same

A memory device includes a first active area, a first doped structure of a first doping type, a second active area, a first gate structure and a second doped structure of a second doping type different from the first doping type. The second active area is disposed between the first active area and the first doped structure. The first gate structure is disposed between the first active area and the second active area in a layout view, and configured to store a first bit with the first active area and the second active area. The second doped structure is coupled to the first gate structure and disposed between the first doped structure and the second active area. The second doped structure and the first doped structure are configured to receive a first signal corresponding to the first bit from the first gate structure.

Memory device and system

Resistive memory device and method for manufacturing with protrusion of electrode

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Semiconductor device and method of manufacturing the same

A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.

Memories with metal-ferroelectric-semiconductor (MFS) transistors

The present invention provides a catalyst for producing hydrogen and a preparing method thereof. The method includes the steps of adding a first metal source, a second metal source, a third metal source and a cerium source into a first organic solvent containing a surfactant to form a colloidal mixture, wherein a metal of the first metal source is a Group IIIB metal; a metal of the second metal source is selected from the group consisting of alkali metals, alkaline earth metals and Group IIIB metals, and a metal of the third metal source is a transition metal; calcining the colloidal mixture to form a metal solid solution; and allowing the metal solid solution to be carried on a carrier to obtain the catalyst. When the catalyst of the present invention is used for an ethanol oxidation reformation, the reaction temperature of the ethanol oxidation reformation can be significantly decreased. After the catalyst is used for long periods of time, the ethanol oxidation reformation still has high ethanol conversion ratio and hydrogen selection ratio.

Catalyst for producing hydrogen and preparing method thereof

The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350&#xb0; C. to 550&#xb0; C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800&#xb0; C. to 1000&#xb0; C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.

Ethanol reforming catalyst composition and method of producing ethanol reforming catalyst

A method and system is disclosed for device trimming. A device trimming system comprises at least one reference device to be trimmed having a reference electrical parameter, at least one trimming device to be coupled with the reference device for forming a trimmed reference device providing an altered reference electrical parameter based on a combination of the reference device and the trimming device, and at least one electrical fuse based control module for controlling whether the trimming device is to be coupled with the reference device based on a state of the electrical fuse.

Storing information with electrical fuse for device trimming

A fuse resistance monitoring system is disclosed to comprise at least one non-regenerative sense amplifier; at least one fuse module having at least one fuse cell coupled to a first terminal of the sense amplifier; and a reference resistor coupled to a second terminal of the sense amplifier, wherein a source voltage node between the fuse module and the sense amplifier is monitored to reflect a resistance of the fuse cell.

Growing community of inventors

Hsinchu, Taiwan

Yun-Sheng Chen