Texas Instruments Corporation

Yun-Shan Chang

Thomas A Vrotsos

Julian Zhiliang Chen

An SCR provides for increased holding voltage by decoupling the pnp and npn parasitic bipolar transistors of the SCR. In one embodiment, a N&plus; region is placed between the n&plus; region and the p&plus; region normally associated with conventional SCR devices, to formulate a new resistance. The new resistance is manifested to allow more current to flow through the new resistance rather than through the SCR parasitic pnp bipolar transistor. Since the parasitic pnp bipolar transistor no longer turns on as strongly as it would otherwise without the low resistance path through the new resistor, the holding voltage of the SCR is raised.

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Sunnyvale, CA, United States of America

Yun-Shan Chang