Samsung Electronics Co., Ltd.

Sungkyunkwan University

Global Frontier Center for Multiscale Energy Systems

Yun Seok Kim

Jong-Ho Lee

Min Joo Kim

Ha-Jin Lim

Hyung-suk Jung

Hyun Suk Jung

Chun Mo Sung

Sang Hoon Park

Ji Yoon Kim

Simon Buehlmann

Seung Bum Hong

So Yeon Park

Sung Hoon Choa

Min Hee Kim

Hyung Chul Lee

Byeong Jo Kim

Sang Myeong Lee

Mi Yeon Baek

Kwang Soo No

Yeon Kyeong Ju

Sang Yong An

Bum Young Byun

The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Composites for removing heavy metal and method of synthesizing the same

A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.

Bit recording process on ferroelectric medium using probe or small conductive structure and recording medium thereof

A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.

Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same

A brushless DC motor prevents disconnection of a magnetic flux and to minimize leakage of the magnetic flux, thereby reducing torque ripple. A plurality of magnetic flux-disconnection preventing holes are arranged in an outer periphery of a rotor core between installing holes into which magnets are fitted. The plurality of magnetic flux-disconnection preventing holes are symmetrical at both sides about a first line connecting a center of the rotor core to a center between the adjacent installing holes, and an angle between the first line and a second line connecting the center of the rotor core to an outermost end of the plurality of magnetic flux-disconnection preventing holes is about 15&#x2dc;20&#xb0;. A length between an outer periphery of the rotor core and an outer periphery of the plurality of magnetic flux-disconnection preventing holes is smaller than a gap between the rotor core and the stator.

Brushless DC motor

Growing community of inventors

Seoul, South Korea

Yun Seok Kim