Samsung Electronics Co., Ltd.

Hyundai Motor Company

Yun-Seok Kim

Hyung-suk Jung

Jong-Ho Lee

Ha-Jin Lim

Nae-in Lee

Seok-Joo Doh

Young-sun Kim

Sung-Tae Kim

Jong-Cheol Lee

Jae-Eun Park

Young-Geun Park

Jae-Hyun Yeo

Gab-Jin Nam

Jong-ho Lee

Jong-Ho Yang

Cha-young Yoo

Jae-hwan Kim

Jae-hyoung Choi

Cha-Young Yoo

Jong-Pyo Kim

Ho-Kyu Kang

Jae-Hyoung Choi

Jea-Woong Yi

Phil-Gi Lee

There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Method of fabricating metal silicate layer using atomic layer deposition technique

In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.

Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure

A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

Semiconductor devices having different gate dielectrics and methods for manufacturing the same

High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices

In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.

Method of fabricating high-k dielectric layer having reduced impurity

A method for manufacturing valve seats using a laser cladding process is provided that includes forming a casting material on which the valve seats are to be formed; fabricating a valve seat target position on which laser cladding will be performed, the valve seat target position being provided at a location on the casting material where a valve seat is to be formed; removing an oxidation film formed on the valve seat target position; injecting a metal powder mixture on the valve seat target position, the metal powder mixture being realized through a mixture of two or more metal powders at a predetermined ratio by weight %; and irradiating a laser beam on the metal powder mixture to clad the metal powder mixture on the valve seat target position to thereby form the valve seat.

Method for manufacturing valve seat using laser cladding process

High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

Post thermal treatment methods of forming high dielectric layers in integrated circuit devices

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Seoul, South Korea

Yun-Seok Kim