Samsung Electronics Co., Ltd.

Yun-seok Kim

Seung-bum Hong

Ju-Hwan Jung

Dong-Ki Min

Hong-sik Park

Chul-min Park

Sung-dong Kim

Kyoung-lock Baeck

Kwang-soo No

A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.

Recording medium comprising ferroelectric layer, nonvolatile memory device comprising recording medium, and methods of writing and reading data for the memory device

A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Method of writing data on a storage device using a probe technique

Growing community of inventors

Namyangiu-si, South Korea

Yun-seok Kim