Xiamen San'an Optoelectronics Co., Ltd

Xiamen San'an Optoelectronics Co., Ltd.

Yun-Ming Lo

Chung-Ying Chang

Meng-Hsin Yeh

Wen-Yu Lin

Chien-Yao Tseng

A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg, Eg, Eg) that satisfy a relationship of Eg<Eg<Eg. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.

Semiconductor light emitting device

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

Light-emitting diode

An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg), a second energy bandgap (Eg), and a third energy bandgap (Eg) that satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Epitaxial light emitting structure and light emitting diode

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg, Eg, and Egwhich satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. In addition, Egis greater than an energy band gap of the P-type electron-blocking layer.

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Xiamen, China

Yun-Ming Lo