Apple Inc.

National Semiconductor Corporation

Yun Liu

Paul Stephen Drzaic

Yifan Zhang

Jonggook Kim

Joseph A De Santis

Hoon Sik Kim

Chieh-Wei Chen

Hao Chen

Mahdi Farrokh Baroughi

ByoungSuk Kim

Bhadrinarayana Lalgudi Visweswaran

Tae-Wook Koh

Chih Jen Yang

Amin Salehi

Xingfeng He

The present disclosure relates to systems and methods to control brightness or color in foldable displays. An electronic device may include a foldable electronic display and processing circuitry. The foldable electronic display may have a first part and a second part that are foldable at a folding angle with respect to one another. The processing circuitry may provide image data to the foldable electronic display that varies based at least in part on the folding angle.

Methods for color or luminance compensation based on view location in foldable displays

Display panel stack-up structures are described. In an embodiment, a display panel includes a substrate, a light source, and a multiple layer thin film encapsulation over the light source. In an embodiment, the display panel additionally includes an anti-reflection layer over the light source. In an embodiment, an incoherence layer is located within the thin film encapsulation.

Incoherent thin film encapsulation for display

A current mirror method is provided that can be utilized to evaluate thermal issues is silicon-on-insulator (SOI) bipolar junction transistors (BJTs). The method significantly improves safe operating area (SOA) measurement sensitivity. Unlike conventional methods, the current mirror method can provide quantitative analysis of the BJTs thermal instability over a wide power range, even in the apparent SOA of the device. This method can also predict and evaluate SOA with respect to emitter ballast resistance and current crowding.

Current mirror methodology quantifying time dependent thermal instability accurately in SOI BJT circuitry

A method for quantifying safe operating regions within a safe operating area (SOA) for a bipolar junction transistor (BJT) by driving the device under test (DUT) as part of a current mirror circuit and monitoring variances in the current mirror ratio for various biasing conditions.

Method for quantifying safe operating area for bipolar junction transistor

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Sunnyvale, CA, United States of America

Yun Liu