Skhynix Inc.

Yun-Kyoung Lee

Sung-Wook Jung

Young-Soo Ahn

Tae-Hwa Lee

A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.

Growing community of inventors

Gyeonggi-do, South Korea

Yun-Kyoung Lee