Samsung Electronics Co., Ltd.

Yun Kwang Jeon

Doug Yong Sung

Se Jin Oh

Kul Inn

Sung Ho Jang

Ki Ho Hwang

Jong Woo Sun

Jung Pyo Hong

Protopopov Vladimir

Hak Young Kim

Hwa Jun Jung

Yong Ho Lim

Jung Hwan Kim

Jin Seok Lee

Yung Hee Lee

Tae Kyun Kang

Chan Bin Mo

Seung Bin Ahn

Jae Ik Kim

Yu Sin Kim

An apparatus for monitoring an interior of a process chamber including a process chamber including a chamber body and a view port defined in the chamber body, a cover section including a pinhole in one end, the cover section disposed to correspond to an end portion of the view port, the cover section having a first length in a direction toward a center point of the process chamber, and a sensing unit inserted into the view port to monitor the interior of the process chamber through the pinhole, a region in the process chamber to be sensed by the sensing unit determined based on the first length may be provided.

Apparatus for monitoring process chamber

A plasma processing apparatus includes a chamber, a window plate disposed in an upper portion of the chamber and having a fastening hole defined therein, an injector having a body part including a plurality of nozzles and configured to be fastened to the fastening hole, and a flange part extending radially from the body part to partially cover a bottom surface of the window plate when the body part is fastened to the fastening hole, and a stopper configured to be fastened to the body part on an upper surface of the window plate to hold the injector in the fastening hole when the body part is fastened to the fastening hole.

Plasma processing apparatus

A semiconductor substrate measuring apparatus includes a light source unit generating irradiation light including light in a first wavelength band and light in a second wavelength band. An optical unit irradiates the irradiation light on a measurement object and condenses reflected light. A light splitting unit splits the reflected light, condensed in the optical unit, into a first optical path and a second optical path. A first detecting unit is disposed on the first optical path and detects first interference light in the first wavelength band in the reflected light. A second detecting unit is disposed on the second optical path and detects second interference light in the second wavelength band in the reflected light. A controlling unit calculates at least one of a surface shape or a thickness of the measurement object. The controlling unit calculates a temperature of the measurement object.

Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same

An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

Ion beam extractor

An ion neutralizer enhances a heat transfer rate between a reflecting plate and a frame while preventing the reflecting plate from being bent due to thermal deformation. The ion neutralizer includes a frame and a plurality of reflecting plates integrally formed with the frame to neutralize plasma ions. Each reflecting plate has a cantilever shape. Each reflecting plate has a supporting end in surface contact with the frame, and a free end to define a space with the frame in order to prevent the reflecting plate from being bent upon stretching due to thermal deformation.

Ion neutralizer

Growing community of inventors

Seoul, South Korea

Yun Kwang Jeon