Samsung Electronics Co., Ltd.

Tmd Lab Co. Ltd

Yun Ki Lee

Jun Sung Park

Jong Hoon Park

Jung-Saeng Kim

Bumsuk Kim

Bum Suk Kim

Hyungeun Yoo

Minwook Jung

Taesub Jung

Jonghoon Park

Bomi Kim

Tae Sung Lee

Joonkyoung Lee

Junghyun Kim

Dong Kyu Lee

Chang Rok Moon

Dong Min Keum

Kwang Hee Lee

Kwanhee Lee

Kyungho Lee

Yong Kim

Youn Ho Kim

Byung Hoon Ko

Seung Woo Noh

Jong Wook Lee

Tak Hyung Lee

Jeong Eun Hwang

Tae Han Kim

Sung Mo Ahn

Hyuk Soon Choi

Gi Bum Kim

Min Kyu Jung

Hyuk An

Junsung Park

Hak-Joon Sung

Bo Mi Kim

Yoongi Joung

Yoon Gi Joung

Seounghyun Kim

Min Wook Jung

Eun Ju Yeom

A method of fabricating an image sensor includes forming a semiconductor substrate of a first conductivity type, forming a pixel isolation trench in in the semiconductor substrate to define pixel regions, forming a liner insulating layer in the pixel isolation trench, doping the liner insulating layer with dopants of a first conductivity type, forming a semiconductor layer on the liner insulating layer to fill the pixel isolation trench after the doping of the dopants, and performing a thermal treatment process on the semiconductor substrate.

Image sensor and method of fabricating the same

An image sensor, including a substrate having a first surface, and a second surface opposite to the first surface; a first focus pixel; a first merged pixel; a second merged pixel; a first color filter; a second color filter; a third color filter; a grid pattern separating the first to third color filters, but not overlapped by the first to third color filters; a first micro-lens disposed on the first color filter; and a second micro-lens disposed on the second and third color filters, wherein a first-third unit pixel, the first focus pixel, and a second-third unit pixel are continuously arranged along the first direction, and wherein a width of the grid pattern between the first color filter and the second color filter is greater than a width of the grid pattern between the second color filter and the third color filter.

Image sensor

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

An image sensor includes a substrate including pixel regions and having a first surface, a second surface opposite the first surface, and a first trench recessed from the first surface, a shallow device isolation pattern provided in the first trench, and a deep device isolation pattern between the pixel regions and provided in the substrate. The deep device isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and an isolation pattern provided between the substrate and the semiconductor pattern. The isolation pattern includes a first isolation pattern adjacent to the second surface, and a second isolation pattern adjacent to the first surface. A first interface at which the first isolation pattern contacts the second isolation pattern is spaced apart from the shallow device isolation pattern. The first isolation pattern includes a different material from that of the second isolation pattern.

In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

Back side illumination image sensors and electronic device including the same

An image sensor includes different first and second focus pixels in a substrate; a first adjacent pixel in the substrate and adjacent to the first focus pixel in a positive first direction, a pixel being absent between the first focus pixel and the first adjacent pixel; a first micro-lens covering the first adjacent pixel; a second adjacent pixel in the substrate and adjacent to the second focus pixel in a positive first direction, a pixel being absent between the second focus pixel and the second adjacent pixel; and a second micro-lens covering the second adjacent pixel, and an area of the first micro-lens being different from an area of the second micro-lens.

An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Image sensor with varying same-color color filter thickness

Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

Image sensors

An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.

Image sensor with varying grid width

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

The present invention relates to a photo-cross-linkable shape-memory polymer and a preparation method therefor. The shape-memory polymer according to one embodiment of the present invention comprises a photo-cross-linkable functional group, and thus a shape-memory polymer having a melting point suitable for a physiological or medical application device can be provided. Particularly, a method for preparing the shape-memory polymer, according to one embodiment of the present invention, uses a catalyst for inducing the simultaneous ring-opening polymerization of two monomers (CL, GMA) during synthesis of the shape-memory polymer, thereby enabling the synthesis time of the shape-memory polymer to be reduced, and shape-memory polymers having various melting points can be readily prepared by controlling the introduction amounts of CL and GMA.

Photo-cross-linkable shape-memory polymer and preparation method therefor

An image sensor is disclosed. The image sensor may include pixel groups, which are two-dimensionally arranged on a substrate, and each of the pixel groups including a plurality of pixels. The image sensor may also include a light-blocking pattern, which is disposed on the substrate and between the pixels. The pixel groups may include first image pixel groups sensing a first light, second image pixel groups sensing a second light, and an auto-focus (AF) pixel group detecting a phase. The AF pixel group may include a first AF pixel and a second AF pixel adjacent to each other, and the light-blocking pattern may be absent on the substrate between the first AF pixel and the second AF pixel.

Growing community of inventors

Hwaseong-si, South Korea

Yun Ki Lee