Samsung Electronics Co., Ltd.

Yun-Jung Lee

Chang-Hwan Hwang

Bo-Ra Kim

Sung-Tae Kim

Seok-Jun Won

Han-Mei Choi

Young-Sun Kim

Seung-Hwan Lee

Cha-young Yoo

In-Sung Park

Jae-Hyun Yeo

Ki-yeon Park

Soon-yeon Park

Gil-heyun Choi

Young-sun Kim

Ki-chul Kim

Jin-wook Lee

Young-wook Park

Hee-Sook Park

Jae-Soon Lim

Ki-Vin Im

Wan-don Kim

Ki-Yeon Park

Hee-Won Lee

Eun-ae Chung

Jung-hee Chung

Wan-Don Kim

Dong-Gi Lee

Joon-Suc Jang

Ji-Su Kim

Jeong-hee Chung

Doo-sup Hwang

Suk-Eun Kang

Gi-Vin Im

Gab-jin Nam

Chan-Ha Kim

Seung-Kyung Ro

Young-Ha Choi

An operating method of a storage device includes a controller: receiving read data from a non-volatile memory; measuring a plurality of threshold voltage distributions respectively corresponding to a plurality of memory units of the non-volatile memory, based on the received read data; measuring a distribution variation between the plurality of memory units, based on the measured plurality of threshold voltage distributions; dynamically determining operation parameters for the non-volatile memory, based on the measured distribution variation; and transmitting, to the non-volatile memory, an operate command, an address, and at least one operation parameter corresponding to the address.

Storage device having parameter calibration function, and operating method thereof

Mobile phone

In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

Growing community of inventors

Hwaseong-si, South Korea

Yun-Jung Lee