Cheil Industries Inc.

Samsung Sdi Co., Inc.

Yun-Jun Kim

Yoo-Jeong Choi

Chung-Heon Lee

Hyun-Ji Song

Hea-Jung Kim

Yong-Woon Yoon

Joon-Young Moon

Youn-Jin Cho

Young-Min Kim

You-Jung Park

Yu-Shin Park

Hyo-Young Kwon

Youn-Hee Nam

Sung-Hwan Kim

Seung-Hee Hong

Seung-Wook Shin

Bum-Jin Lee

Go-Un Kim

Yo-Choul Park

Min-Soo Kim

Sung-Min Kim

Hwan-Sung Cheon

Mi-young Kim

Sang-Kyun Kim

Tae-ho Kim

Ran Namgung

Dominea Rathwell

Seulgi Jeong

Seung-Hyun Kim

Soo-Hyoun Mun

Songse Yi

Hyeon-Il Jung

Yu-Mi Heo

Byeri Yoon

Sun-Hae Kang

Jae-Yeol Baek

Naery Yu

Yeon-Hee Jo

Sun-Min Hwang

Won-Jong Hwang

MyeongKoo Kim

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1: 

Monomer, organic layer composition, organic layer, and method of forming patterns

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent, 

Organic layer composition, organic layer, and method of forming patterns

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.*-A-B&#x2014;*&#x2003;&#x2003;[Chemical Formula 1] In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Hardmask composition and method of forming patterns using the hardmask composition

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A', L and n are the same as in the detailed description.

Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: 

Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A', L, L&#x2032;, X and n are the same as defined in the specification.

Monomer for hardmask composition, hardmask composition including said monomer, and method for forming pattern using said hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.  In the above Chemical Formula 1, Ato A, Xto X, L, L, n and m are the same as described in the detailed description.

Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, 

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.

Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. In the above Chemical Formula 1, A and B are as defined in the specification.

A hardmask composition includes a monomer represented by the following Chemical Formula 1 and an aromatic ring-containing polymer, 

Growing community of inventors

Suwon-si, South Korea

Yun-Jun Kim