Grace Semiconductor Manufacturing Corporation

Yun Jun Huh

A method of forming a notched gate structure comprising a semiconductor substrate having a first oxide layer formed thereon. A first conductive layer is formed on the semiconductor substrate. A portion of the first conductive layer and a portion of the first oxide layer are removed to form first gate structures. First spacers are formed on the sidewalls of the gate structure. A second oxide layer is formed on the semiconductor substrate. A second conductive layer is formed on the surface of the second oxide layer. The first gate structures and the second conductive layer formed thereon are then removed to form a second gate structure. Second spacers are formed on the sidewalls of the second gate structure to complete the notched gate structure process. The method of the present invention reduces the capacitance between the gate and the source/drain extension, and simplifies the process, thereby increasing the controllability of the process.

Method of forming notched gate structure

A method of fabricating self-aligned contact structures comprising providing a semiconductor substrate having at least two conductive structures thereon. The conductive structures are positioned beside the desired self-aligned contact structures having a plurality of masking structures thereon. Each masking structure has a top surface and a vertical surface. A dielectric layer is formed over the semiconductor substrate. A portion of the dielectric layer is removed by etching to expose the top surface and the vertical surface of each masking structure. A plurality of spacers is formed on the exposed vertical surface. While subsequently forming the self-aligned contact structures between two conductive structures, the peripheral of the nitride spacers has the low parasitic capacitance.

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Shanghai, China

Yun Jun Huh