Lg Semicon Co., Ltd.

Yun Jun Huh

Suk Bin Han

Jae Jeong Kim

Sang Jun Choi

Sang Hyun Kim

Je Uk Oh

A semiconductor wafer cleaning apparatus comprises an outer tank, a cleaning tank provided within the outer tank, a wafer carrier provided within the cleaning tank, a plurality of jet nozzles directed toward the wafer carrier, a main pipe connected to the jet nozzles, a circulating pump connected to the main pipe and the outer tank for circulating a cleansing solution from the outer tank, through the main pipe, the jet nozzles, and the cleaning tank, and a filter for filtering the circulated cleansing solution.

Semiconductor wafer cleaning apparatus and method

Semiconductor wafer cleaning apparatus

A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta.sub.2 O.sub.5 layer on the thermal nitride film, and annealing the Ta.sub.2 O.sub.5 layer using an N.sub.2 O gas.

Method of forming capacitor for semiconductor device using N.sub.2 O gas

A system and method for cleaning semiconductor wafers, includes an internal cleaning tank having an outlet and a cassette for holding wafers, and a device disposed near the outlet of the internal cleaning tank for releasing a cleaning solution so as to increase a flow rate of the cleaning solution by creating a spiral flow of the cleaning solution, an external cleaning tank having an intake through which the cleaning solution is supplied to clean the wafers in the internal cleaning tank, a circulating pipe for connecting the outlet to the intake, a circulating pump formed in the middle section of the circulating pipe to repeatedly circulate that cleaning solution, and a filter for filtering the used cleaning solution circulated by the circulating pump to return the cleaning solution to the internal cleaning tank through the intake. The device prevents contaminating materials from adhering to the semiconductor wafers by spirally drawing out the used cleaning solution from the internal tank.

System and method for cleaning a semiconductor wafer

A semiconductor wafer cleaning apparatus includes an internal cleaning tank having an inlet for introducing and an outlet for removing a cleaning solution, and an external cleaning tank surrounding the internal cleaning tank and having a plurality of inlets and outlets for introducing and removing the cleaning solution. First and second circulation pumps each disposed in the middle of the first and second circulation pipes for connecting the inlet and outlet of the internal cleaning tank with the plurality of inlets and outlets of the external cleaning tank are also provided. A baffle plate may also be disposed within the internal cleaning tank for fixing and separating a cassette having a plurality of wafers contained therein from the bottom of internal cleaning tank. A weight detector is preferably disposed on the baffle plate for detecting a weight heavier than a predetermined reference due to the pressing of the cassette, and a controller for controlling the first and second circulation pumps controls the cleaning operation in response to a detection signal from the weight detector. The semiconductor wafer cleaning apparatus can enhance the cleaning effect by efficiently removing contamination generated during a cleaning process.

A wet-etching method which determines a desired etch-ended point includes the steps of providing an etchant solution in a bath, performing the wet-etch process by dipping a material to be etched in the bath, measuring a weight variation value of the material during the wet etch process, calculating a thickness variation value of the material by using the weight variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

Etch-ending point measuring method for wet-etch process

A method for determining an etch-ending point using a vapor etch apparatus having a chamber is disclosed including the steps of providing a vapor-state etchant in the chamber, inserting a material to be etched in the chamber and etching the material by the etchant, measuring an ion current intensity of a by-product generated during the vapor etch process, calculating a thickness variation value of the material by using the ion current intensity value, and stopping the vapor etch process when the thickness variation value reaches a preset value.

Etch-ending point measuring method for vapor etch process

A wet-etch method which determines a desired etch-ending point includes the steps of providing an etchant solution in a bath, perform a wet-etch process by dipping a material to be etched in the bath, measuring a PH variation value of the etchant solution during the wet-etch process, calculating a thickness variation value of the material by using the measured PH variation value, and stopping the wet-etch process when the thickness variation value reaches a preset value.

Growing community of inventors

Chungcheongbuk-do, South Korea

Yun Jun Huh