Samsung Electronics Co., Ltd.

Yun-il Lee

Sung-il Park

Hyung-suk Lee

Yong-Ho Jeon

Dong-hun Lee

Kye-Hyun Baek

Jae-hyun Park

Cheol Kyu Kim

Jung-Gun You

Mirco Cantoro

Cheol Jin Kim

Beom-Jin Park

Yeon-Cheol Heo

Byoung-Gi Kim

Chang-Min Yoe

Seung-Chan Yun

An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Integrated circuit device and method of forming the same

A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

Semiconductor devices

A vertical transistor structure includes a first transistor and a second transistor. The first transistor includes a first lower electrode connected to a second upper electrode of the second transistor, and a second upper electrode connected to a first lower electrode of the second transistor. The first transistor also includes a gate electrode connected to a gate electrode of the second transistor.

Vertical semiconductor device

Growing community of inventors

Anyang-si, South Korea

Yun-il Lee