Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Yun-hyuk Choi

Jong-jin Park

Xavier Bulliard

Kwang-hee Lee

Kwang-sup Lee

Tae Sang Kim

Won-jae Joo

Tae-gwan Park

Joon Seok Park

A gas barrier thin film having a substrate, an anchoring layer, and an inorganic oxide layer, the anchoring layer including a silicon-containing organic-inorganic composite copolymer comprising a repeating unit of the formula&#x2014;(SiO)&#x2014;,a repeating unit of the formula&#x2014;(SiRR&#x2014;NR)&#x2014;,and at least one or a combination of repeating units of the formulas wherein at least one of R, R, and Ris independently hydrogen, R, R, and Rare each independently C-Calkyl, C-Calkenyl, C-Calkynyl, C-Calkoxyl, or C-Caryl, R, R, R, and Rare each independently hydrogen, C-Calkyl, C-Calkoxyl, C-Ccycloalkyl, or C-Caryl, Rand Rare not simultaneously hydrogen, Rand Rare not simultaneously hydrogen, n+m+r=1, 0&#x3c;n&#x3c;1, 0&#x3c;m&#x3c;1, and 0&#x3c;r&#x3c;1, 'n', 'm', and &#x2018;r&#x2019; are each a molar ratio, &#x2018;r&#x2019; is p, q, or p+q, and a degree of polymerization is about 1,000 to about 1,000,000.

Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film

An organic material including a hydrophilic polymer and an organic moiety having a hydroxyl substituted C-Caromatic functional group, the organic moiety binding to an end or a side of the hydrophilic polymer.

Organic material, film comprising the same and electric device comprising the film

A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer.

Thin-film transistor having etch stop multi-layer and method of manufacturing the same

A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.

Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition

A composition for radical polymerization includes a photosensitive material, a photoinitiator, a solvent, and a material for adjusting a size of a pattern. A method of forming a pattern using the composition is also disclosed.

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Seoul, South Korea

Yun-hyuk Choi