Skhynix Inc.

Sk Hynix In.

Yun Hui Yang

Young Woong Do

Tae Lim Gu

Tae Gyu Park

Tae Yang Lee

Sung Hoon Jeon

Dong Bin Park

Ha Neul Yoo

Ji Suk Park

An image sensing device includes a first substrate including a first front surface and a first back surface, a first interlayer insulation layer disposed below the first front surface and including a first interconnect, a second substrate including a second front surface and a second back surface, a second interlayer insulation layer disposed over the second front surface and below the first interlayer insulation layer to be in contact with the first interlayer insulation layer, and including a second interconnect, a first TSV disposed in a through hole formed by penetrating the first substrate and the first interlayer insulation layer and by etching of a portion of the second interlayer insulation layer, and electrically connecting the first interconnect to the second interconnect, and a passivation layer formed to cover the first TSV. An upper end of the first TSV is located at a height lower than the first back surface.

Image sensing device including through silicon via (TSV) structure

An image sensing device is provided to include: a substrate including photoelectric conversion elements, each configured to generate photocharge corresponding to the intensity of incident light; a plurality of optical filters disposed over the substrate and configured to selectively transmit the incident light to the plurality of photoelectric conversion elements; and an optical grid structure disposed between the optical filters adjacent to each other. The optical grid structure comprises a capping layer disposed along a boundary of the optical grid structure and structured to define a space with an open area to expose the space to an outside of the optical grid structure so that the space is filled with air as an air layer, wherein a first width of a top side of the air layer is smaller than a second width of a bottom side thereof.

Image sensing device

An image sensing device may include a plurality of test pixel blocks and a signal processing unit. The test pixel blocks may be simultaneously heated to different temperatures. The signal processing unit may be in communication with the test blocks and configured to obtain pixel signals for different colors, respectively, based on dark current information associated with the temperatures of the test pixel blocks.

Image sensing device and method of operating the same

An image sensing device includes a photoelectric conversion element configured to generate photocharges in response to incident light, a floating diffusion configured to temporarily store the photocharges generated by the photoelectric conversion element, and a transfer gate configured to transmit the photocharges generated by the photoelectric conversion element to the floating diffusion region. The transfer gate includes a main transfer gate disposed to overlap a center section of the photoelectric conversion element and configured to operate in response to a first transmission signal, and a sub transfer gate disposed to overlap a boundary region of the photoelectric conversion element and configured to operate in response to a second potential level different from the first potential level.

Image sensing device having multiple transfer gate structure

An image sensor is provided to include: one or more first grid structures arranged in rows and columns of a pixel array including imaging pixels arranged in rows and columns, the first grid structures structured to separate the imaging pixels from one another and including a low refractive-index material or an air to provide an optical isolation between two adjacent imaging pixels; and a gap region disposed between the first grid structures and configured to physically isolate the first grid structures from each other, wherein the first grid structures comprise a first capping layer covering the low refractive-index material or the air.

Image sensor

An image sensing device includes a semiconductor substrate, a material layer, a lens layer, and a lens capping layer. The semiconductor substrate includes a pixel region, which include a plurality of unit pixels, and a pixel-array peripheral region located outside of and peripheral to the pixel region. The material layer is disposed over the semiconductor substrate in the pixel region and the pixel-array peripheral region, and includes a first trench extending to a predetermined depth in the pixel-array peripheral region. The lens layer is disposed over the material layer in the pixel region and collects incident light into a unit pixel in the pixel region. The lens capping layer is disposed over the lens layer and the material layer and includes an edge region formed to fill the first trench.

An image sensing device includes a first test block, a second test block, and a readout block. The first test block includes a plurality of first image sensing pixels structured to convert incident light carrying an image into a first pixel signal indicative of the image, and a first heating element structured to transmit heat to the first image sensing pixels. The second test block includes a plurality of second image sensing pixels that each include a light blocking structure to be shielded from receiving incident light to generate a second pixel signal without being directly exposed to the incident light, and a second heating element structured to transmit heat to the second image sensing pixels. The readout block processes the first pixel signal output from the first test block and the second pixel signal output from the second test block.

Image sensing device and imaging device including the same

An image sensing device is disclosed. The image sensor includes a stacked air grid including a plurality of air layers that is physically isolated from each other and then stacked, and a color filter disposed at one side of the stacked air grid.

Image sensor including air grid structure

An image sensing device that includes a reinforced structure is disclosed. The image sensing device includes a semiconductor substrate structured to include a pixel region including a plurality of unit pixels and a peripheral region located outside the pixel region, a plurality of microlenses disposed over the semiconductor substrate in the pixel region, a structural reinforcement layer disposed over the semiconductor substrate in the peripheral region, and a lens capping layer structured to cover the microlenses and at least of the structural reinforcement layer. The structural reinforcement layer includes a plurality of fingers each finger vertically structured to have a rounded upper end and laterally extend to have a predetermined length toward the pixel region. The fingers are consecutively arranged and connected to each other in a lateral direction, and side surfaces of fingers are in contact with side surfaces of immediately adjacent fingers.

Image sensing device with structural reinforcement layer

Designs of image sensors including a plurality of first gild structures arranged in row and column directions of a pixel array of imaging pixels and structured to separate the imaging pixels from one another, each of the first grid structures including an air to provide optical isolation between two adjacent imaging pixels and a plurality of second grid structures respectively disposed at each intersection between the row direction and the column direction in which the first grid structures are arranged.

Designs of image sensors by including at least one grid structure extending in rows and columns of a pixel array including a plurality of imaging pixels arranged in rows and columns and structured to separate the imaging pixels from one another, the grid structure including a low-index material or an air to provide optical isolation between two adjacent imaging pixels, and a plurality of holes respectively formed at crossing points of the grid structures.

An image sensor includes a substrate configured to include a plurality of pixels, each pixel including a photodiode formed in the substrate, a plurality of deep trench isolation (DTI) structures formed in the substrate to optically isolate each of the plurality of pixels from neighboring pixels, and a transparent electrode layer arranged over the photodiode and electrically connected to the plurality of DTI structures.

Growing community of inventors

Cheongju-si, South Korea

Yun Hui Yang