Skhynix Inc.

Yun-Hui Yang

Pyong-Su Kwag

Sung-Kun Park

Young-Jun Kwon

Donghyun Woo

Ho-Ryeong Lee

Cha-Young Lee

Min-Ki Na

Young-Hun Choi

Jong-Chae Kim

Dong-Hyun Woo

Youngwoong Do

Sung-Bo Hwang

Seon-Man Hwang

An image sensor may include an antireflection layer formed over a substrate, grid patterns and a guide pattern that are disposed over the antireflection layer, a color filter between the grid patterns, a phase difference detection filter structured to include a portion between one of the grid patterns and the guide pattern, and a lining layer formed to include a portion between one of the grid patterns and the phase difference detection filter. The lining layer has a refractive index lower than that of the phase difference detection filter.

Image sensor including a phase difference detection pixel having a lining layer

An image sensor includes a pixel array and a test region adjacent to the pixel array. Each of the pixel array and the test region include a plurality of pixels, and each of the pixels in the test region include: a substrate including a photoelectric conversion element; and a transparent layer formed over the substrate and having an inclined top surface.

Image sensor with test region

This technology relates to an image sensor. The image sensor includes a substrate including a photoelectric transformation element, the substrate includes a first surface and a second surface faced to the first surface; first and second shielding layers overlapped to photoelectric transformation element and formed over the first and second surfaces, respectively; and a third shielding layer surrounding the photoelectric transformation element and contacted to the first and second shielding layers by penetrating the substrate.

Image sensor and method for fabricating the same

An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.

Image sensor including phase difference detectors

An image sensor includes a plurality of photodiodes formed in a substrate; nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes; and a plurality of nano voids formed in each nano void region of the nano void regions.

Image sensor having nano voids and method for fabricating the same

A stacked image sensor includes: a lower device including a lower inter-layer dielectric layer over an upper surface of a lower substrate, and a lower capping layer over the lower inter-layer dielectric layer; an upper device stacked over the lower device, including photodiodes in an upper substrate, an upper inter-layer dielectric layer below a lower surface of the upper substrate, and an upper capping layer below the upper inter-layer dielectric layer; and an air gap formed between the lower inter-layer dielectric layer and the upper inter-layer dielectric layer.

Stacked image sensor having an air gap

This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.

Image sensor

An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.

Image sensor having test pattern and offset correction method thereof

An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.

Image sensing device and method for driving the same

An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Image sensor including vertical transfer gate

A wafer level curved image sensor may include a substrate having a central region, a peripheral region, and an edge region, the peripheral region being formed between the central region and the edge region, supporting patterns formed over the substrate, first fixed patterns formed between the supporting patterns, and an image sensing chip formed over the supporting patterns. The supporting patterns and the first fixed patterns, in combination, form a planar lower surface and a concavely-curved upper surface. The image sensing chip has a curved lower surface and a curved upper surface.

Wafer level curved image sensors and method of fabricating the same

Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

An image sensor may include a substrate having a photoelectric conversion element and a grid pattern formed over the substrate and having a flat upper surface, a first side surface, and a second side surface, wherein the first side surface and the second side are located opposite to each other. A first internal angle is formed between the flat upper surface and the first side surface, a second internal angle is formed between the flat upper surface and the second side surface, and the first internal angle may be smaller than the second internal angle.

Growing community of inventors

Gyeonggi-do, South Korea

Yun-Hui Yang