Fifth Electronics Research Institute of Ministry of Industry and Information Technology

Guangzhou Shanggong Plastic Co., Ltd

Fifth Electronics Research Institute of Ministry of Industry and Information Techonoly

Yun Huang

Yiqiang Chen

Yunfei En

Yudong Lu

Dengyun Lei

Bo Hou

Xiaowen Zhang

Wenxiao Fang

Lichao Hao

Qiquan Liang

Chunhua He

Liwei Wang

Yuan Liu

Qingzhong Xiao

Haoyu Liang

An all-plastic pump comprising an outer cover, a plastic spring, an inner cover and a pressing head. The pump includes an accessory cavity in the outer cover, with a conveying hole. A tubular plastic spring is positioned within the cavity, surrounding the conveying hole. Supporting rods are arranged circumferentially on an inner wall of the plastic spring's port, with one end of the rods connected to a baffle. The inner cover surrounds the plastic spring, and a stop tube is inserted through the supporting rods, with its port sealing against the baffle. The pressing head, mounted in a pressable manner, includes a discharging hole, pressing sheet, and conveying tube. When pressed, the pressing sheet compresses the plastic spring, causing separation between the baffle and stop tube, allowing fluid discharge.

All-plastic pump

Disclosed are a method, device and system for health monitoring of SoC. The method includes: acquiring in real time sensor data of sensors monitoring SoC performance, the sensor data including reliability degradation sensor data, temperature sensor data, noise sensor data and current sensor data; extracting characteristic data representative of the SoC performance from the sensor data; performing analysis and prediction on the characteristic data in real time by using a prediction algorithm to obtain a performance state and a performance degradation trend of the SoC; outputting performance state information and performance degradation trend information of the SoC. The disclosed method, device and system for health monitoring of SoC can monitor the performance state of the SoC in real time and predict the performance degradation trend of the SoC in real time.

Method, device and system for health monitoring of system-on-chip

A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime &#x3c4;, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point &#x3c4;, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time &#x3c4;, acquiring a remaining life of electromigration failure corresponding to &#x3c4;' based on &#x3c4;, &#x3c4;and &#x3c4;. A device for remaining life prediction for electromigration failure is also disclosed.

Method and device of remaining life prediction for electromigration failure

An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Qand Qsignals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.

On-chip TDDB degradation monitoring and failure early warning circuit for SoC

The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.

System and method for health monitoring and early warning for electronic device

A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime &#x3c4;1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point &#x3c4;2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time &#x3c4;3, acquiring a remaining life of electromigration failure corresponding to &#x3c4;2' based on &#x3c4;1, &#x3c4;2 and &#x3c4;3. A device for remaining life prediction for electromigration failure is also disclosed.

A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.

Growing community of inventors

Guangzhou, China

Yun Huang