Jusung Engineering Co., Ltd.

Yun Hoe Kim

Jae Wan Lee

Ki Bum Kim

Jae Ho Kim

Chul Joo Hwang

Seung Youb Sa

Chang Kyun Park

Yong Hyun Kim

Gu Hyun Jung

Yoon Jeong Kim

Jin Wook Moon

Kyu Bum Lee

Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Substrate processing apparatus

Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.

Thin film transistor and method for manufacturing the same

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Gwangju-si, South Korea

Yun Hoe Kim