Lg Philips Lcd Co., Inc.

Lg Display Co., Ltd.

Inktec Co., Inc.

Lg.phillips Lcd Co., Ltd.

Lg.philips Co., Ltd.

Yun-Ho Jung

Kwang Choon Chung

Hyun-Nam Cho

Ji Hoon Yoo

Kwang-Choon Chung

Hyun Nam Cho

Myoung-Seon Gong

Won-Kyu Park

Se-Jin Chung

Ji-Hoon Yoo

Ae-Ran Hyun

Ik-Kyu Park

Provided are a method for manufacturing a transparent conductive film and a transparent conductive film manufactured thereby, the method including: a) forming a coating film by coating a transparent conductive film coating solution on a substrate, the transparent conductive film coating solution including a non-polar solvent; a polar solvent; a conductive metal ink; and a surfactant; and b) forming a conductive pattern having a hole type transmissive part and a pattern part formed of the conductive metal ink, on the substrate, by drying and burning the coating film.

Method for manufacturing transparent conductive film

Provided is a production method for a transparent conductive film wherein: a substrate has formed thereon a transparent conductive oxide, a conductive metal body, and a conductive polymer comprised in a transparent composite conductive layer; or else a substrate has formed thereon a transparent conductive oxide layer; a conductive metal body layer, and a conductive polymer layer comprised in a transparent composite conductive layer; or a substrate has formed thereon a transparent conductive oxide layer, and also a conductive metal body and a conductive polymer comprised in an organic-inorganic hybrid layer in a transparent composite conductive layer. Also provided is a transparent conductive film produced by means of the method.

Production method for a transparent conductive film and a transparent conductive film produced thereby

The present invention relates to new phosphaphenanthrene compounds with excellent light emitting property and an organic light emitting diode (OLED) using the same.

Phosphaphenanthrene compounds and organic light emitting diode using the same

The present invention provides a novel &#x3b2;-sulfonimide compound having at least one imide group and at least one sulfonyl group and a method for preparing the same.

Beta-sulfone imides and preparation thereof

A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer in the display region and a second active layer in the peripheral region by etching the polycrystalline silicon film, forming a first gate electrode over the first active layer, a second gate electrode over the second active layer and a gate line connected to the first gate electrode, and forming first source and drain electrodes connected to the first active layer, second source and drain electrodes connected to the second active layer and data line connected to the first source electrode. Further, the second gate electrode overlaps the first active layer to form a first channel region, and the first channel region is formed inside one of the grains.

Liquid crystal display device having drive circuit

An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from about 600 to about 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.

Amorphous silicon deposition for sequential lateral solidification

Method of fabricating liquid crystal display device having drive circuit

A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and first and second side portions at both sides of the central portion; moving the substrate and the mask relative to one another such that the first side portion of each transmissive region overlaps the central portion of each first irradiated region; and irradiating the laser beam onto the amorphous silicon layer a second time through the mask to form a plurality of second irradiated regions corresponding to the plurality of transmissive regions.

Mask for sequential lateral solidification and crystallization method using thereof

A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through which the laser beam passes. An objective lens for scaling down the laser beam is arranged between the mask and the X-Y stage. A mask stage is connected to the mask for controlling minute movement of the mask for crystallizing amorphous silicon in one block.

Apparatus and method of crystallizing amorphous silicon

A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.

Laser annealing apparatus

A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etching the polycrystalline silicon film; forming a gate electrode over the active layer, the gate electrode overlapping the active layer to form a channel region, the channel region being formed inside one of the grains; and forming source and drain electrodes connected to both sides of the active layer.

Liquid crystal display device having drive circuit and fabricating method thereof

A laser beam mask for shaping a laser beam includes a base substrate having first and second surfaces and having at least one first open portion, and a reflecting layer on the first surface of the base substrate, wherein the reflecting layer has at least one second open portion corresponding to the at least one first open portion and totally reflects the laser beam.

Mask for laser irradiation and apparatus for laser crystallization using the same

An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.

A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing the laser beam. Each stripe-shaped light transmitting portion is rectangular-shaped, and each light-transmitting portion includes triangular-shaped or semicircular-shaped edges on both sides. The distance between the adjacent light transmitting portions is less than the width of the light transmitting portion. The width of the light transmitting portions is less than or equal to twice the maximum length of lateral grain growth that is to be grown by sequential lateral solidification (SLS).

Growing community of inventors

Seoul, South Korea

Yun-Ho Jung