Samsung Electronics Co., Ltd.

Yun-Ho Hong

Sang-Wan Nam

Jae-Hoon Lee

Jong-Hoon Lee

Eun-Suk Cho

Woo-Pyo Jeong

Jung-ho Song

A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Growing community of inventors

Hwaseong-si, South Korea

Yun-Ho Hong