Korea Institute of Science and Technology

Yun Hi Lee

Myung Hwan Oh

Byeong Kwon Ju

Nam Yang Lee

Dong Ky Shin

Seong Jae Jeung

Dong Ho Kim

Keun Ha Koh

Yoon Taek Jang

Young Dae Ju

Task Sang Hahn

Jin Ho Sunwoo

Chun Woo Lee

Tae Ho Yeom

Man Ho Song

Taek Sang Hahn

A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.

Parallel and selective growth method of carbon nanotube on the substrates for electronic-spintronic device applications

A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.

Method for fabricating a field emission display

A field emission display device and a fabrication method thereof, by which a vacuum sealing can be simple, and electric and optical characteristics between pixels can be improved by achieving a device package by means of a junction between substrates in vacuum without a spacer, which includes a semiconductor substrate having a groove having a predetermined depth; an n-well formed on the semiconductor substrate under the bottom of the groove; an emitter formed on the n-well; an insulation film formed on a portion of the semiconductor substrate, in which the groove is not formed; a transparent electrode bonded to the upper portion of the insulation film; a light emitting layer arranged on the upper portion of the emitter and formed within the transparent electrode; and a glass substrate formed on the transparent electrode.

Field emission display device

An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.

Field emission display device fabrication method

An improved white-light emitting electroluminescent display device and a manufacturing method thereof capable of advantageously generating a light having a red, blue, and green wave lengths within a unique material, which includes a substrate; a lower electrode disposed on the substrate; a first dielectric layer disposed on the lower electrode; a ZnS:Pr,Mn light-emitting layer disposed on the first dielectric layer; a second dielectric layer; and an upper electrode disposed on the second dielectric layer. In addition, a fabrication method thereof includes the steps of forming a first dielectric layer on an upper electrode; forming a light-emitting layer on the first dielectric layer by depositing a ZnS:Pr,Mn luminescent material made of Pr of 1.4.about.0.5 mol % and Mn of 0.1.about.0.01 mol % on a ZnS host material; forming a second dielectric layer on the light-emitting layer; and forming a lower electrode on the second dielectric layer.

White-light emitting electroluminescent display device and manufacturing

An improved white-lite emitting electroluminescent display capable of emitting a light having a red, blue, and green wave length in a single material and having a buffer layer of Si.sub.x N.sub.y between a dielectric layer of BaTa.sub.2 O.sub.6 and a light-emitting layer, which includes a substrate; a lower dielectric layer of Bata.sub.2 O.sub.6 formed on a transparent electrode; a light-emitting layer of SrS:Pr,F formed on the lower dielectric layer; a buffer layer of Si.sub.x N.sub.y formed on the light-emitting layer; a upper dielectric layer of BaTa.sub.2 O.sub.6 formed on the buffer layer; and an upper electrode formed on the upper dielectric layer, and further includes the steps of a first step which forms a lower electrode on a substrate; a second step which forms a light-emitting layer of SrS:Pr.F on a lower dielectric layer; a third step which forms a buffer layer of Si.sub.x N.sub.y on the light-emitting layer; a fourth step which forms a upper dielectric layer of BaTa.sub.2 O.sub.6 on the buffer layer; and a fifth step which deposits an aluminum electrode on the upper dielectric layer.

White-light emitting electroluminescent display and fabricating method

A method for fabricating a luminant for a field emission display fabricated through PVD is disclosed. The method includes the steps of: forming a ZnO:Zn luminescent thin film on a glass substrate through PVD; and forming a conductive thin film on the ZnO:Zn luminescent thin film, to thereby change the luminescence threshold, brightness and luminescent color suitable for the operation characteristics of the emitter in a predetermined range, by controlling the thickness of the luminescent layer, temperature and ambient of heat treatment of the luminant.

Luminant for field emission display fabricated through physical vapor

A fabrication method for a test piece for observing non-contact regions in a pair of bonded semiconductor substrates includes thinning one substrate of a pair of bonded semiconductor substrates, grade-polishing the thinned semiconductor substrate and the bonded semiconductor substrates to have a predetermined graded angle relative their bonded surfaces, and dry-etching an area around the bonded surfaces of the grade-polished semiconductor substrates to reveal faults. With the thusly fabricated test piece, micro non-contact regions can be simply observed and crystal faults existing on the bonded surfaces as well as in the micro non-contact regions can be easily detected.

Growing community of inventors

Seoul, South Korea

Yun Hi Lee