Samsung Electronics Co., Ltd.

Korea Research Institute of Standards and Science

Samsung Sdi Co., Inc.

Yun-Hee Lee

Se-Ho You

Hee-Seok Lee

Young-Soo Park

Yong-hoon Kim

Young-Bae Kim

Byung-Jun Park

Heung-Kyu Kwon

Heeseok Lee

Seung-Yong Cha

Eun-Seok Song

Seong-Ho Shin

Seung Hoon Nahm

Chiyoung Lee

Ju-Youn Choi

Nae-in Lee

Jae-Han Lee

Kyoung Seok Lee

Geum-Jong Bae

Hee-Sung Kang

Seok-Ha Lee

Soo Young Park

Sang-Hwan Park

Kang-bok Lee

Jong-Wan Jung

Jae-Hyun Shim

Ki-Soo Lee

Joo-Han Song

Kwon Sang Ryu

Chang-Rok Moon

Se-Hee Lee

Hyeon-Ah Ju

Un Bong Baek

In Jung Kim

Eun-Cheol Lee

Tae-Hyoun Kim

Yong Il Kim

An electronic device package includes a package substrate, an interposer located above the package substrate and electrically connected to the package substrate, a processing device located above the interposer and electrically connected to the interposer, at least one high bandwidth memory device located above the interposer and electrically connected to the interposer and the processing device, a power management integrated circuit device located above the interposer and electrically connected to the interposer and the processing device, and a passive device located on or inside the interposer and electrically connected to the power management integrated circuit device.

Electronic device package

A positive active material for a rechargeable lithium battery includes a LiCoOparticle. An interior of the particle has a layered structure and a surface of the particle has a spinel structure.

Positive active material for rechargeable lithium battery, method of preparing same and rechargeable lithium battery including same

A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package and the upper semiconductor package while supporting a space therebetween, and an insulation layer disposed at least outside the inter-package connecting portion and filling the space between the lower semiconductor package and the upper semiconductor package, and an electromagnetic shielding layer surrounding lateral and top surfaces of the stacked package.

Stacked package structure and method of forming a package-on-package device including an electromagnetic shielding layer

Provided is a non-destructive inspection device for pressure containers using leakage-flux measurement, including: a coil winding mount disposed at one side on an outside of the pressure container to magnetize the pressure container; a sensor support provided with a plurality of magnetic field sensing sensors arranged at the other side on the outside of the pressure container; a yoke magnetizing the pressure container to generate a magnetic flux in a direction vertical to a direction of the magnetic flux generated by the coil winding mount; an endoscope attached with at least one magnetic field sensing sensor, and the like.

Non-destructive inspection device for pressure containers using leakage-flux measurement

Provided is a package substrate and a semiconductor package. The package substrate includes a main body having an upper surface and a lower surface opposite to the upper surface, a plurality of external terminals attached to the lower surface, and a plurality of grooves formed in regions of the lower surface to which the plurality of external terminals is not attached. The semiconductor package includes a package substrate, a semiconductor chip mounted on the upper surface of the semiconductor substrate, and a board providing a region mounted with the package substrate and being mounted with a plurality of mounting elements which are vertically aligned with the plurality of grooves and are inserted into the plurality of grooves.

Package substrate and semiconductor package having the same

Semiconductor packages are provided. The semiconductor packages may include an upper package including a plurality of upper semiconductor devices connected to an upper package substrate. The semiconductor packages may also include a lower package including a lower semiconductor device connected to a lower package substrate. The upper and lower packages may be connected to each other.

Semiconductor packages including a plurality of upper semiconductor devices on a lower semiconductor device

Stacked package structure including insulating layer between two stacked packages

A package substrate includes a main body having an upper surface and a lower surface opposite to the upper surface, a plurality of external terminals attached to the lower surface, and a plurality of grooves formed in regions of the lower surface to which the plurality of external terminals is not attached. The semiconductor package includes a package substrate, a semiconductor chip mounted on the upper surface of the semiconductor substrate, and a board providing a region mounted with the package substrate and being mounted with a plurality of mounting elements which are vertically aligned with the plurality of grooves and are inserted into the plurality of grooves.

Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.

Hydrogen penetration barrier

A semiconductor device having a unit capable of temporarily storing electrical signals, may include an electrical signal generation unit, a first signal transmission unit electrically connected to the electrical signal generation unit, a first signal storage unit electrically connected to the first signal transmission unit, a second signal transmission unit electrically connected to the first signal storage unit, a second signal storage unit electrically connected to the second signal transmission unit, a reset unit electrically connected to the second signal storage unit, an amplification unit electrically connected to the second signal storage unit, a selection unit electrically connected to the amplification unit, and an output unit electrically connected to the selection unit, for stable signal processing.

Semiconductor device having temporary signal storage unit

An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.

Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same

Dark current caused by a crystalline defect in an interfacial surface of a device isolating layer is prevented according to an image sensor and a method of manufacturing the same. A first device isolating layer adjacent to a photodiode disposed on an upper surface of a semiconductor substrate protrudes from the semiconductor substrate. A side surface of the first device isolating layer is covered by a first spacer with a refractivity greater than that of the first device isolating layer. The photodiode is insulated by the device isolating layer protruding from the semiconductor substrate to prevent the dark current. By forming the spacer on the sidewall of the device isolating layer to attain total reflection, efficiency of light incident to the photodiode is improved.

Image sensor and method of manufacturing the same

Disclosed is a home zone service method for assigning a specified zone to a mobile telephone subscriber and charging the subscriber at different billing rated accordingly as the subscriber makes a telephone call inside or outside the zone. According to the home zone service method, a zone which is defined by a first measurement value and a second measurement value as a sub-sector is determined by measuring a round trip delay from a fixed location in a sector of a cell to the neighbor base stations to which the subscriber belongs, so that a predetermined home zone database including the first value and the second value is prepared. The round trip delay is measured from a specified signal if a portable mobile terminal of the subscriber generates a request signal to establish a call connection. Then, it is determined whether the subscriber is located inside the sub-sector if the measured round trip delay falls between the first value and the second value of the home zone database.

Home zone service method for mobile telephone subscribers in mobile radio communication system

Growing community of inventors

Hwaseong-si, South Korea

Yun-Hee Lee