United Microelectronics Corp.

Yun-Han Chu

Shih-Wei Li

Guo-Chih Wei

An integrated semiconductor device and method for fabricating the same are provided wherein the integrated semiconductor device comprises a substrate a first stress-inducing layer, a second stress-inducing layer and an integrated circuit layer. The first stress-inducing layer covers on the substrate. The second stress-inducing layer partially covers on the first stress-inducing layer. The integrated circuit layer is bonded over the substrate.

Growing community of inventors

Hsinchu, Taiwan

Yun-Han Chu