Sk Siltron Co., Ltd.

Yun Ha An

Do Yeon Kim

Il Soo Choi

An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.

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Gyeongsangbuk-do, South Korea

Yun Ha An