Jusung Engineering Co., Ltd.

Yun Gyu Ha

Ki Bum Kim

Chul Joo Hwang

Jong Sik Kim

Do Hyung Kim

Kwang Su Yoo

Woong Kyo Oh

Young Woon Kim

Il Hyung Cho

The present disclosure relates to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and residence time of gas and a plasma density according to process conditions. The substrate processing apparatus according to the embodiment of the present disclosure is advantageous in that it can enhance efficiency in the substrate processing process by decreasing the flow rate and increasing residence time of gas and the plasma density in the process of supplying the gas through the shape forming of the gas injection module including the first and second injection plates.

Substrate processing apparatus

A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Apparatus for supplying gas and apparatus for processing substrate using the same

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Yongin-si, South Korea

Yun Gyu Ha