Intevac, Inc.

Yun Chung

Kevin P Fairbairn

Kenneth A Costello

Edward Yin

David W Brown

Patricia Gober

Kevin P c/o Intevac Inc Fairbairn

Backthinning in an area selective manner is applied to CMOS imaging sensorsfor use in electron bombarded active pixel array devices. A further arrangement results in an array of collimatorsaligned with pixelsor groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layeron the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layeroptimizes electron collection at the pixel array.

Backside imaging through a doped layer

Backthinning in an area selective manner is applied to imaging sensorsfor use in electron bombarded devices. A further arrangement results in an array of collimatorsaligned with pixelsor groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layeron the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layeroptimizes electron collection at the pixel array.

Backside thinning of image array devices

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Santa Clara County, CA, United States of America

Yun Chung