Xidian University

Yuming Zhang

Hui Guo

Keji Zhang

Tianmin Lei

Pengfei Deng

Lei Yuan

Renxu Jia

Chao Han

Hao Yuan

Chen Liu

Yanqiang Shi

Tiqiang Pang

Yanfei Hu

Yucheng Wang

Hongliang Lv

Jiabo Liang

Yanjing He

Yuting Ji

Xiaoyan Tang

Qingwen Song

Fengqi Zhang

Hongpeng Zhang

Yujuan Zhang

This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiOfilm, a SiNfilm and a second SiOfilm stacked in this order, wherein the first SiOfilm is formed by a thermal oxidation process, the SiNfilm is formed by a low pressure chemical vapor deposition process, and the second SiOfilm is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

Package structure for semiconductor device and preparation method thereof

A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10˜10Ω·cm, and the method has high repeatability.

Method for preparating SiC ohmic contact with low specific contact resistivity

A junction barrier schottky (JBS) diode is provided and includes: a bottom metal layer, a N-type substrate layer and a N-type epitaxial layer sequentially arranged in that order from bottom to top, P-type ion injection regions are disposed on an upper surface of the N-type epitaxial layer, distances of the P-type ion injection regions are gradually increased along a direction from an edge to a center of the JBS diode; an isolation dielectric layer is arranged on a periphery of the upper surface of the N-type epitaxial layer, an top metal layer is arranged on the upper surface of the N-type epitaxial layer and an upper surface of the isolation dielectric layer and further is in contact with the P-type ion injection regions. The JBS diode can effectively inhibit an occurrence of local electromigration and improve a device reliability.

Junction barrier schottky diode

A method for manufacturing an ultraviolet photodetector based on GaOmaterial are provided. The method includes: selecting a substrate; forming a GaOlayer on an upper surface of the substrate; forming a top electrode on the GaOlayer; and forming a bottom electrode on a lower surface of the substrate. GaOmaterial is adopted, with a light transmittance in the solar blind area can reach 80% or even 90%. The GaOmaterial is suitable for application to a light absorbing layer, and its transparent conductive electrical properties are also beneficial to improve the light absorption capacity of the light absorbing layer, thereby greatly improving the device performance of the photodetector diode.

Method for manufacturing ultraviolet photodetector based on Ga2O3 material

A method for manufacturing a HEMT/HHMT device based on CHNHPbImaterial are provided. The method includes: selecting an AlOsubstrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the AlOsubstrate not covered by the source electrode and the drain electrode; manufacturing CHNHPbImaterial on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.

[object Object]

Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Clreaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiOon the surface of the SiC sample chip and engraving a figure window on the SiOlayer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Clinto the quartz tube, reacting the bare SiC with Clfor 3-8 min at 700-1100&#xb0; C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200&#xb0; C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(), a p-type ohm contact electrode(), a SiOpassivation layer(), a SiOcompact insulation layer(), a p-type SiC epitaxial layer(), an n-type SiC epitaxial layer(), an n-type SiC substrate() and an n-type ohm contact electrode(). The doping density of the p-type SiC epitaxial layer() is 1&#xd7;10to 5&#xd7;10cm, the doping density of the n-type SiC substrate() is 1&#xd7;10to 7&#xd7;10cm. The n-type SiC epitaxial layer() is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1&#xd7;10to 5&#xd7;10cm. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof

Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150&#xb0; C.; introducing CClvapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CClvapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100&#xb0; C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

Process for preparing graphene on a SiC substrate based on metal film-assisted annealing

A method for preparing graphene by reaction with Clbased on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950&#xb0; C.-1150&#xb0; C. gradually, supplying CHand carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150&#xb0; C.-1350&#xb0; C. rapidly, supplying CHand SiH, growing a 3C&#x2014;SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of Hgradually, introducing the grown sample wafer of 3C&#x2014;SiC into a quartz tube, heating to 700-1100&#xb0; C., supplying mixed gas of Ar and Cl, and reacting Clwith 3C&#x2014;SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900&#xb0; C.-1100&#xb0; C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.

Growing community of inventors

Xi'an, China

Yuming Zhang