Hkc Corporation Limited

Beihai Hkc Optoelectronics Technology Co., Ltd.

Chuzhou Hkc Optoelectronics Technology Co., Ltd.

Yuming Xia

En-tsung Cho

En-Tsung Cho

Haijiang Yuan

Wanfei Yong

Wei Li

Lidan Ye

Je-hao Hsu

Chongwei Tang

Haoxuan Zheng

Zhen Liu

Fengyun Yang

Hejing Zhang

Zhipeng He

Guiqing Du

A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

Manufacturing method for silicon nitride thin film, thin film transistor and display panel

The present disclosure provides a curved display panel and a manufacturing method thereof and a display device. The curved display panel includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer and a second alignment layer. The first substrate and the second substrate are opposite to each other. The first alignment layer is located on a surface of the first substrate facing the second substrate. The second alignment layer is located on a surface of second substrate facing the first substrate. The liquid crystal layer is located between the first alignment layer and the second alignment layer. The first alignment layer includes a porous structure layer and alignment materials. The porous structure layer defines a plurality of spaced filling holes. The plurality of filling holes are perpendicular to the surface of the first substrate. The alignment materials are filled within the plurality of filling holes.

Curved display panel and manufacturing method thereof and display device

A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer.

Method of manufacturing thin film transistor and display device

A method for manufacturing a data line includes: forming a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing and then developing the photoresist layer to form a groove penetrating the photoresist layer, thus obtaining a patterned photoresist layer; and depositing a functional material electrochemically on the patterned photoresist layer, then removing the patterned photoresist layer to obtain the conductive layer with the patterned functional material layer, thereby obtaining the data line.

Method for manufacturing data line, method for manufacturing array substrate and display device

The present application discloses a manufacturing method for a graphene film, a porous silica powder and a transparent conductive layer. The manufacturing method for a graphene film includes steps of: providing a porous material powder; placing the porous material powder in an atomic layer deposition device; forming a porous material template having a metal catalyst layer in pores; and preparing the graphene film on the porous material template.

Manufacturing method for graphene film, porous silica powder and transparent conductive layer

The present disclosure relates to a source-drain electrode and a method for manufacturing the same, an array substrate and a method for manufacturing the same, and a display mechanism. A method for manufacturing a source-drain electrode includes steps of: disposing a conductive layer on an underlay; forming a photoresist layer on a side of the conductive layer away from the underlay; exposing and then developing the photoresist layer to form grooves passing through the photoresist layer on the photoresist layer, so as to form a patterned photoresist layer; and electrochemically depositing a functional material on the patterned photoresist layer and then removing the photoresist layer to obtain the conductive layer on which a patterned layer is formed, so as to obtain the source-drain electrode. The source-drain electrode manufactured by the above method has a higher conductivity.

Method for manufacturing source-drain electrode, method for manufacturing array substrate, and display mechanism

The disclosure relates to a conductive particle and a manufacturing method thereof, an adhesive and an application thereof. The conductive particle includes a core, a conductive carbon layer and a conductive polymer layer. The conductive carbon layer covers the core, and the conductive polymer layer is provided on the conductive carbon layer. The conductivity of the conductive particle is higher.

Conductive particle and manufacturing method thereof, adhesive and application thereof

The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.

Insulation unit based on array substrate and manufacturing method thereof, array substrate and manufacturing method thereof, and electronic device

Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 Å to 6000 Å; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Manufacture method of array substrate, array substrate, and display panel

The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.

Manufacturing method for gate electrode and thin film transistor and display panel

The present application discloses a array substrate, a manufacturing method of the array substrate, and a display panel, the manufacture procedure includes the following steps: sequentially forming a buffer layer and a photoresist layer on a glass substrate; placing the substrate into an activation agent for activation, and forming an activation liquid particle layer with a first preset pattern at a corresponding position where the activation agent is in contact with the photoresist layer, and forming an activation liquid particle layer with a second preset pattern at a corresponding position where the activation agent is in contact with the buffer layer; removing the photoresist layer and the activation liquid particle layer with the first preset pattern; and performing chemical plating to form a first metal layer at a position corresponding to the activation liquid particle layer with the second preset pattern in contact with the buffer layer.

Array substrate, manufacturing method of the array substrate, and display panel

The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.

Manufacturing method for display panel and display panel

Disclosed are a manufacturing method of an array substrate, an array substrate and a display device. The manufacturing method of the array substrate includes: providing a substrate; depositing and patterning a gate layer on the substrate; depositing a protective layer on the substrate covered with the gate layer by atomic layer deposition; and depositing and patterning an amorphous silicon layer and an ohmic contact layer on the protective layer. The uniform protective layer of the present disclosure reduces the influence on the field effect mobility of the thin film transistor, makes the display of the product more stable, and improves the display effect.

Manufacturing method of array substrate, array substrate and display device

The present application discloses a manufacturing method for a carbon nanotube conductive film, a display panel and a display device. The manufacturing method for the carbon nanotube conductive film includes steps of: forming a mesoporous silica; depositing a catalyst layer in a channel of the mesoporous silica by atomic layer deposition; manufacturing the mesoporous silica with the catalyst layer deposited in the channel into a mesoporous silica film; introducing a carbon matrix precursor into the channel of the mesoporous silica film by chemical vapor deposition, and reacting under the catalysis of the catalyst layer to form a carbon nanotube film; and removing the mesoporous silica and the catalyst layer from the carbon nanotube film to form the transparent carbon nanotube conductive film.

Growing community of inventors

Guangxi, China

Yuming Xia