Symyx Technologies, Inc.

Celanese International Corporation

L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

American Air Liquide, Inc.

Other

Yumin Liu

Jean-Marc Girard

David M Lowe

Anthony F Volpe

Feng Li

Nicolas Blasco

Lynn Van Erden

Alfred Hagemeyer

Claus G Lugmair

Sonia Plaza

Alfred Gerhard Hagemeyer

Valery Sokolovskii

Barbara F Kimmich

Ioan Nicolau

Tao Wang

Karin Yaccato

Leslie E Wade

Jun Han

Victor Wong

Venkateswara R Pallem

Ziyun Wang

Peng Zhang

Gennadiy Itov

Grigory Nikiforov

Zhiwen Wan

Guillaume Husson

Fabrizio Marchegiani

Claudia Fafard

Rocio Alejandra Arteaga Muller

Stefan Wiese

Zhengning Gao

Bo Peng

Julien Gatineau

Fan Qin

Bin Sui

Thomas J Larrabee

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula:(NRR)(NRR)Ga[(RRN)C(RR)(NR)]  (I)(Cy-N)Ga[(RRN)C(RR)(NR)]  (II)wherein, Rto Rare independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; Rto Rmay be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

Method for deposition of gallium-containing film with gallium precursors

A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes

Disclosed are vapor delivery systems comprise a housing body defining an interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidically connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.

Vapor delivery systems for solid and liquid materials

A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Tungsten pentachloride conditioning and crystalline phase manipulation

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two &#x2014;SiH&#x2014; moieties, either as terminal groups (&#x2014;SiHR) or embedded in a carbosilane cyclic compound, wherein R is H, a C-Clinear, branched, or cyclic alkyl- group, a C-Clinear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

Conditioning of tungsten pentachloride to form specific crystalline phases is disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Synthesis of tungsten pentahalide compositions having low impurity profiles are disclosed. The specific impurity profile permits deposition of high purity tungsten-containing films using vapor deposition processes or other semiconductor manufacturing processes without introduction of performance-impacting contaminants.

Heterogeneous wet synthesis process for preparation of high purity tungsten pentahalide

The present invention addresses at least four different aspects relating to catalyst structure, methods of making those catalysts and methods of using those catalysts for making alkenyl alkanoates. Separately or together in combination, the various aspects of the invention are directed at improving the production of alkenyl alkanoates and VA in particular, including reduction of by-products and improved production efficiency. A first aspect of the present invention pertains to a unique palladium/gold catalyst or pre-catalyst (optionally calcined) that includes rhodium or another metal. A second aspect pertains to a palladium/gold catalyst or pre-catalyst that is based on a layered support material where one layer of the support material is substantially free of catalytic components. A third aspect pertains to a palladium/gold catalyst or pre-catalyst on a zirconia containing support material. A fourth aspect pertains to a palladium/gold catalyst or pre-catalyst that is produced from substantially chloride free catalytic components.

Layered support material for catalysts

Catalysts and methods for alkane oxydehydrogenation are disclosed. The catalysts of the invention generally comprise (i) nickel or a nickel-containing compound and (ii) at least one or more of titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), tungsten (W), yttrium (Y), zinc (Zn), zirconium (Zr), or aluminum (Al), or a compound containing one or more of such element(s). In preferred embodiments, the catalyst is a supported catalyst, the alkane is selected from the group consisting of ethane, propane, isobutane, n-butane and ethyl chloride, molecular oxygen is co-fed with the alkane to a reaction zone maintained at a temperature ranging from about 250&#xb0; C. to about 350&#xb0; C., and the ethane is oxidatively dehydrogenated to form the corresponding alkene with an alkane conversion of at least about 10% and an alkene selectivity of at least about 70%.

Ni catalysts and methods for alkane dehydrogenation

Halide free precurors for catalysts

Rhodium containing catalysts

Methods and apparatus for combinatorial (i.e., high-throughput) materials research, such as catalysis research, that involves parallel apparatus for simultaneously effecting mechanical treatments such as grinding, mixing, pressing, crushing, sieving, and/or fractionating of such materials are disclosed. The methods and apparatus are useful for mechanically treating catalysis materials and other solid materials, including without limitation, electronic materials such as phosphors, colorants such as pigments, and pharmaceuticals such as crystalline drugs or drug candidates. The simultaneous protocols and parallel apparatus offer substantial improvements in overall throughput for preparing arrays of materials, such as catalysis materials.

Methods and apparatus for mechanical treatment of materials such as catalysts

Growing community of inventors

San Jose, CA, United States of America

Yumin Liu