Tokyo Electron Limited

International Business Machines Corporation

Kawasaki Steel Corporation

Kabushikikaisha Kojundokagaku Kenkyusho

Gas-phase Growth Ltd.

Yumiko Kawano

Hideaki Yamasaki

Shuji Azumo

Susumu Arima

Fenton Read McFeely

Tomohiro Ohta

Gert J Leusink

Nobuyuki Takeyasu

Takeshi Kaizuka

Shinichi Ike

Tatsuo Hatano

Tsukasa Matsuda

Takashi Mochizuki

Eiichi Kondoh

Tomoharu Katagiri

Kazuhito Nakamura

Sandra Guy Malhotra

Mitsuhiro Tachibana

Masami Mizukami

Hiroshi Shinriki

Atsushi Gomi

Akinobu Kakimoto

Masahito Sugiura

Tadashi Nakano

Tomihiro Yonenaga

Hiroshi Yamamoto

Hiroki Murakami

John Jacob Yurkas

Hidekimi Kadokura

Yusaku Kashiwagi

Takashi Horiuchi

Shintaro Higashi

Yukihiro Shimogaki

Hajime Nakabayashi

Kenichi Kubo

Koumei Matsuzawa

Vijay Narayanan

Andrew Herbert Simon

Taro Ikeda

Toshiyuki Hirota

Paul Charles Jamison

Tadahiro Ishizaka

Kenji Suzuki

Joseph T Hillman

Takashi Matsumoto

Cory Wajda

Yasuhiko Kojima

Koji Akiyama

Genji Nakamura

Tugrul Yasar

Kazutoshi Iwai

Takakazu Kiyomura

Michitaka Aita

Kazuya Okubo

Isao Gunji

Kenji Ouchi

Yoshinori Kuboshima

Yuichi Wada

Shigetoshi Hosaka

Takayuki Komiya

Vincent Vezin

Hiroshi Kobayashi

Taiki Kato

Keizo Hosoda

Hideki Yoshikawa

Zeyuan Ni

Eiichi Kondo

Tetsuya Yano

Hideaki Machida

Masato Ishikawa

Hiroshi Sudoh

Shinpei Jinnouchi

Philippe Gaubert

Enrico Mosca

Koumei Matsuzava

Satoshi Yonezawa

The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

Film-forming method

A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.

Selective film formation using self-assembled monolayer

A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.

Film formation method and film formation apparatus

There is provided a film formation method. The method comprises: preparing a substrate having a first region on which an oxide formed by oxidization of a surface of a conductive material is exposed and a second region on which an insulating material is exposed; replacing a film of the oxide with a film of boron oxide by supplying a boron halide gas to the substrate; etching the boron oxide film in the first region and forming a self-assembled monolayer film in the second region by supplying a gas of a fluorine-containing silane compound to the substrate; and forming a conductive target film selectively in the first region, from the first region and the second region, using the self-assembled monolayer film formed in the second region, the first region having the conductive material exposed thereon.

Film formation method and film formation device

A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.

Film forming method for forming self-assembled monolayer on substrate

A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.

Method of manufacturing semiconductor device

A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.

Method for forming film

A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.

A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

Film forming method

A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO, Pt, Pd, CuO, and CuO, using an Ru(EtCp)gas and an Ogas; and selectively forming a first SiO-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiOfilm only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Selective film forming method and method of manufacturing semiconductor device

A heat treatment apparatus configured to perform a heat treatment on a plurality of substrates, including: a processing vessel configured to accommodate the plurality of substrates on which the heat treatment is performed; an electromagnetic induction source configured to generate an oscillating magnetic field having a high frequency within the processing vessel; and a substrate holding element having a plurality of heating elements arranged in a vertical direction and spacers interposed between the adjacent heating elements, the heating element being made of a conductive material and allowing an induced current caused by the oscillating magnetic field to flow therein to generate heat, the substrate holding element supporting the substrates in a state where the substrates are mounted on the heating elements.

Heat treatment apparatus

A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

Cobalt base film-forming method, cobalt base film-forming material, and novel compound

A Ge&#x2014;Sb&#x2014;Te film forming method includes a Sb source material introducing process, a first purging process, a Te source material introducing process, a second purging process, a Ge source material introducing process, a third purging process. An additive gas containing at least one of ammonia, methylamine, dimethylamine, hydrazine, monomethylhydrazine, dimethylhydrazine and pyridine is introduced in at least one of the Sb, Te and Ge source material introducing processes and the first to third purging processes.

Ge&#x2014;Sb&#x2014;Te film forming method, Ge&#x2014;Te film forming method, and Sb&#x2014;Te film forming method

Disclosed is a method for forming a Ge&#x2014;Sb&#x2014;Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge&#x2014;Sb&#x2014;Te film formed of GeSbTeis formed on the substrate by CVD. The method for forming a Ge&#x2014;Sb&#x2014;Te film comprises: a step (step) wherein the gaseous Ge material and the gaseous Sb material or alternatively a small amount of the gaseous Te material not sufficient for formed of GeSbTein addition to the gaseous Ge material and the gaseous Sb material are introduced into the process chamber so that a precursor film, which does not contain Te or contains Te in an amount smaller than that in GeSbTe, is formed on the substrate; and a step (step) wherein the gaseous Te material is introduced into the process chamber and the precursor film is caused to adsorb Te, so that the Te concentration in the film is adjusted.

Method for forming Ge-Sb-Te film and storage medium

There is provided a method for forming a Ge&#x2014;Sb&#x2014;Te film having a composition of GeSbTeon a substrate by a CVD method using a gaseous Ge source material, a gaseous Sb source material and a gaseous Te source material. The method includes loading the substrate within a processing chamber (Process 1); performing a first stage film forming process on the substrate by supplying the gaseous Ge source material and the gaseous Sb source material (Process 2); and performing a second stage film forming process on a film obtained through the first stage film forming process by supplying the gaseous Sb source material and the gaseous Te source material (Process 3). The Ge&#x2014;Sb&#x2014;Te film is formed by the film obtained through Process 2 and by a film obtained through Process 3.

Growing community of inventors

Nirasaki, Japan

Yumiko Kawano