Mitsubishi Electric Corporation

Yumie Kitajima

Kiyoshi Arai

Shota Saito

Tatunori Yanagimoto

A first member of a first semiconductor module and a second member of a second semiconductor module are disposed adjacent to each other along a crossing line segment crossing a longitudinal direction of the first semiconductor module as seen in a plan view. The first member is provided with a first circuit. The second member is provided with a second circuit. The first circuit does not drive when the second circuit is driving. The second circuit does not drive when the first circuit is driving.

Power conversion device

An object of the present invention is to obtain a semiconductor device having highly reliable bonding portions. The semiconductor device according to the present invention includes an insulating substrate on which a conductive pattern is formed, and an electrode terminal and a semiconductor element which are bonded to the conductive pattern, the electrode terminal and the conductive pattern are bonded by ultrasonic bonding on a bonding face, and the ultrasonic bonding is performed at a plurality of positions.

Semiconductor device manufacturing method comprising bonding an electrode terminal to a conductive pattern on an insulating substrate using ultrasonic bonding

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Tokyo, Japan

Yumie Kitajima