Samsung Display Co., Ltd.

Kobe Steel, Ltd.

Yumi Iwanari

Jae Woo Park

Toshihiro Kugimiya

Je Hun Lee

Byung Du Ahn

Aya Miki

Shinya Morita

Satoshi Yasuno

Hiroshi Goto

Takayuki Hirano

Takeaki Maeda

Yasuaki Terao

There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.

Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor

Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.

A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided.

Interconnection structure and display device including interconnection structure

Growing community of inventors

Kobe, Japan

Yumi Iwanari